Volume 1250, Issue 1 | MRS Online Proceedings Library

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Volume 1250, Issue 1

December 2010

Symposium G — Materials and Physics for Nonvolatile Memories II

Issue Editors:

C. Bonafos,
Y. Fujisaki,
P. Dimitrakis,
E. Tokumitsu

36 articles in this issue

Characteristics of Organic Memory Using Metal Oxide Nano-Clusters
You-Wei Cheng
Tzu-Yueh Chang
Po-Tsung Lee
OriginalPaper 01 August 2010 Article: 1703
Effect of W substitution in Strontium Bismuth Tantalate Ferroelectric Ceramics: Enhanced Ferroelectric properties
Indrani Coondoo
Neearj Panwar
A. K. Jha
OriginalPaper 01 August 2010 Article: 1602
Nonvolatile Floating Gate Memory Devices Containing AgInSbTe-SiO₂ Nanocomposite Thin Film Prepared by Sputtering Method
Kuo-Chang Chiang
Tsung-Eong Hsieh
OriginalPaper 01 August 2010 Article: 1502
Fabrication of IGZO and In₂O₃-Channel Ferroelectric-Gate Thin Film Transistors
Eisuke Tokumitsu
Tomohiro Oiwa
OriginalPaper 01 August 2010 Article: 1307
A Ferroelectric NAND Flash Memory for Low-Power and Highly Reliable Enterprise SSDs and a Ferroelectric 6T-SRAM for 0.5V Low-Power CPU and SoC
Kousuke Miyaji
Teruyoshi Hatanaka
Ken Takeuchi
OriginalPaper 01 August 2010 Article: 1306
High-temperature process endurance of oxide/electrode stacking structure for resistance random access memory
Hisashi Shima
Takashi Nakano
Hiroyuki Akinaga
OriginalPaper 01 August 2010 Article: 1217
Characteristics of ZnO Thin Film for the Resistive Random Access Memory
Jung Won Seo
Seung Jae Baik
Koseng Su Lim
OriginalPaper 01 August 2010 Article: 1216
Electrical Properties of TaO_x Thin Films for ReRAM Prepared by Reactive RF Magnetron Sputtering Method
Natsuki Fukuda
Hidenao Kurihara
Koukou Suu
OriginalPaper 01 August 2010 Article: 1212
Analysis on Resistance Change Mechanism of NiO-ReRAM Using Visualization Technique of Data Storage Area with Secondary Electron Image
K. Kinoshita
T. Makino
S. Kishida
OriginalPaper 01 August 2010 Article: 1203
Overview and Technical Trend of Chain FeRAM
Daisaburo Takashima
OriginalPaper 01 August 2010 Article: 1101
Memory Effect in Simple Cu Nanogap Junction
Hiroshi Suga
Masayo Horikawa
Yasuhisa Naitoh
OriginalPaper 01 August 2010 Article: 1005
Direct Synthesis of L1₀-Phase Nanostructured CoPt Thin Films Using Dense Plasma Focus Device Operating in Non-optimized Focus Mode
Zhenying Pan
Rajdeep S. Rawat
Augustine T. L. Tan
OriginalPaper 01 August 2010 Article: 804
Magnetostatic Interactions of Two-Dimensional Arrays of Magnetic Strips
Leszek M. Malkinski
Minghui Yu
Donald J. Scherer II
OriginalPaper 01 August 2010 Article: 803
Low Temperature Deposition of Ferromagnetic Ni-Mn-Ga Thin Films From Two Different Targets via rf Magnetron Sputtering
A. C. Lourenço
F. Figueiras
A. L. Kholkin
OriginalPaper 01 August 2010 Article: 802
Low Temperature Growth of Silicon Structures for Application in Flash Memory Devices
Thomas A. Mih
Shashi Paul
Richard B. M. Cross
OriginalPaper 01 August 2010 Article: 704
Memory retention of doped SbTe phase change line cells measured isothermally and isochronally
J. L. M. Oosthoek
B. J. Kooi
D. J. Gravesteijn
OriginalPaper 01 August 2010 Article: 704
Charge trapping memories with atomic layer deposited high-k dielectrics capping layers
N. Nikolaou
P. Dimitrakis
Markku Leskelä
OriginalPaper 01 August 2010 Article: 703
Phase Change Memory with Chalcogenide Selector (PCMS): Characteristic Behaviors, Physical Models and Key Material Properties
I. Karpov
D Kencke
G. Spadini
OriginalPaper 01 August 2010 Article: 701
The Quantitative Study of Trapped Charges in Nano-Scale Ge Island by EFM Measurement
Zhen Lin
Pavel Brunkov
Georges Bremond
OriginalPaper 01 August 2010 Article: 612
CVD Growth and Passivation of W and TiN Nanocrystals for Non-Volatile Memory Applications
G. Gay
D. Belhachemi
B. De Salvo
OriginalPaper 01 August 2010 Article: 606
Formation of Ge Nanocrystals in High-k Dielectric Layers for Memory Applications
P. Dimitrakis
V. Ioannou-Sougleridis
J. Becker
OriginalPaper 01 August 2010 Article: 604
Nanocrystal memory device utilizing GaN quantum dots by RF-MBD
P. Dimitrakis
E. Iliopoulos
P. Normand
OriginalPaper 01 August 2010 Article: 603
Effect of Ion-implantation on Forming and Resistive-Switching Response of NiO Thin films
Robert G. Elliman
Muhammad N. Saleh
Kidane Belay
OriginalPaper 01 August 2010 Article: 506
Correlation between Oxygen Composition and Electrical Properties in NiO Thin Films for Resistive Random Access Memory
Yusuke Nishi
Tatsuya Iwata
Tsunenobu Kimoto
OriginalPaper 01 August 2010 Article: 505
Size-dependent temperature instability in NiO–based resistive switching memory
D. Ielmini
F. Nardi
A. L. Lacaita
OriginalPaper 01 August 2010 Article: 503
Small Organic Molecules for Electrically Re-writable Non-volatile Polymer Memory Devices
Iulia Salaoru
Shashi Paul
OriginalPaper 01 August 2010 Article: 411
Study on C60 doped PMMA for organic memory devices
Micaël Charbonneau
Raluca Tiron
Barbara De Salvo
OriginalPaper 01 August 2010 Article: 407
Structural, Magnetic and Magneto-transport Properties of Reactive-sputtered Fe₃O₄ Thin Films
X. H. Wang
S. Goolaup
W. S. Lew
OriginalPaper 01 August 2010 Article: 302
Fabrication of Prototype Magnetic Coupled Spin-Torque Devices for Non-volatile Logic Applications
Larkhoon Leem
James S. Harris
Stuart Parkin
OriginalPaper 01 August 2010 Article: 301
Overview of Advanced 3D Charge-trapping Flash Memory Devices (Invited)
Hang-Ting Lue
Kuang-Yeu Hsieh
Chih-Yuan Lu
OriginalPaper 01 August 2010 Article: 110
Co/HfO₂ Core-Shell Nanocrystal Memory
Huimei Zhou
James A. Dorman
Jianlin Liu
OriginalPaper 01 August 2010 Article: 109
Charge Trapping Sites in nc-RuO embedded ZrHfO High-k Nonvolatile Memories
Chen-Han Lin
Yue Kuo
OriginalPaper 01 August 2010 Article: 108
Ultra-Low Energy Ion Implantation of Si into HfO₂ and HfSiO-based Structures for Non Volatile Memory Applications
F. Gloux
P. E. Coulon
C. Bonafos
OriginalPaper 01 August 2010 Article: 107
Indium Gallium Arsenide Based Non-Volatile Memory Devices with Site-Specific Self-Assembled Germanium Quantum Dot Gate
Pik-Yiu Chan
Mukesh. Gogna
Faquir C. Jain
OriginalPaper 01 August 2010 Article: 105
Theoretical Characterization of a Nanocrystal Layer for Nonvolatile Memory Applications
Yann Leroy
Dumitru Armeanu
Anne-Sophie Cordan
OriginalPaper 01 August 2010 Article: 104
Annealing effects on Si nanocrystal nonvolatile memories
Panagiotis Dimitrakis
C. Bonafos
P. Normand
OriginalPaper 01 August 2010 Article: 102