Volume 1194, Issue 1

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December 2009

Symposium A — High-k Dielectrics on Semiconductors with High Carrier Mobility

Issue Editors:

P.D. Ye,
M. Hong,
W. Tsai,
A. Dimoulas

12 articles in this issue

Molecular Beam Epitaxy Growth of High Mobility Compound Semiconductor Devices for Integration with Si CMOS
D. Lubyshev
J. M. Fastenau
E. Augendre
OriginalPaper 01 December 2009 Pages: 1 - 9
Tetragonal phase in Ge doped HfO₂ films on Si investigated by X-ray Absorption Spectroscopy
Leonardo Miotti
Karen P. Bastos
Gerald Lucovsky
OriginalPaper 01 December 2009 Pages: 10 - 14
Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-κ MOS Devices
Mathieu Moreau
Daniela Munteanu
Michel Houssa
OriginalPaper 01 December 2009 Pages: 15 - 20
Stress Liner Proximity Technique to Enhance Carrier Mobility in High-κ Metal Gate MOSFETs
Dechao Guo
Kathryn Schonenberg
Mukesh Khare
OriginalPaper 01 December 2009 Pages: 21 - 25
Channel Strain Analysis in Damascene-gate pMOSFETs on Si (100) and (110) Substrate by Conventional and Cross-sectional Raman Spectroscopy
Munehisa Takei
Daisuke Kosemura
Atsushi Ogura
OriginalPaper 01 December 2009 Pages: 26 - 31
SiGe channels for higher mobility CMOS devices
Andreas Naumann
Torben Kelwing
Johann W. Bartha
OriginalPaper 01 December 2009 Pages: 32 - 39
Novel Zirconium Formamidinate Precursor for the ALD of ZrO₂
Huazhi Li
Deo V. Shenai
Jean-Sebastien Lehn
OriginalPaper 01 December 2009 Pages: 40 - 48
High Mobility Channel Materials and Novel Devices for Scaling of Nanoeelectronics beyond the Si Roadmap
Marc Heyns
Florence Bellenger
Wei-E Wang
OriginalPaper 01 December 2009 Pages: 49 - 60
Catalytic Forming Gas Anneal on III-V/Ge MOS systems
Wei-E Wang
H.-C. Lin
M. Heyns
OriginalPaper 01 December 2009 Pages: 61 - 67
Relationships between Interface Structures and Electrical Properties in the High-k/III–V System
Tetsuji Yasuda
Noriyuki Miyata
Shinichi Takagi
OriginalPaper 01 December 2009 Pages: 68 - 79
Interface quality of atomic layer deposited La-doped ZrO2 films on Ge-passivated In_0.15Ga_0.85As substrates
A. Molle
G. Brammertz
M. Fanciulli
OriginalPaper 01 December 2009 Pages: 80 - 88
Epitaxial Growth of High Quality InSb film on Si Substrate by MBE, and Their Device Properties
Yoshihisa Kunimi
Hiromi Fujita
Yoshihiko Shibata
OriginalPaper 01 December 2009 Pages: 89 - 94

Volume 1194, Issue 1

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