Volume 1069, Issue 1 | MRS Online Proceedings Library

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Volume 1069, Issue 1

December 2007

Symposium D — Silicon Carbide 2008—Materials, Processing and Devices

Issue Editors:

M. Dudley,
C. M. Johnson,
A. R. Â Powell,
S. RyuÂ

37 articles in this issue

MOS Capacitor Characteristics of 3C-SiC Films Deposited on Si Substrates at 1270°C
Li Wang
Sima Dimitrijev
Gunter Wagner
Article 01 July 2008 Article: 10691303
3D Thermal Stress Models for Single Chip SiC Power Sub-Modules
Bang-Hung Tsao
Jacob Lawson
James Scofield
Article 01 July 2008 Article: 10691202
SiC-Based Power Converters
Leon Tolbert
Hui Zhang
Madhu S. Chinthavali
Article 01 July 2008 Article: 10691201
Effect of SiC Power DMOSFET Threshold-Voltage Instability
A. J. Lelis
D. Habersat
N. Goldsman
Article 01 July 2008 Article: 10691104
Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 °C
Philip G. Neudeck
David J. Spry
Norman F. Prokop
Article 01 July 2008 Article: 10691102
Performance of SiC Microwave Transistors in Power Amplifiers
S. Azam
R. Jonsson
Q. Wahab
Article 01 July 2008 Article: 10691005
Influence of Shockley Stacking Fault Expansion and Contraction on the Electrical Behavior of 4H-SiC DMOSFETs and MPS diodes
Joshua David Caldwell
Robert E. Stahlbush
Anant Agarwal
Article 01 July 2008 Article: 10691004
Simultaneous Formation of n- and p-Type Ohmic Contacts to 4H-SiC Using the Binary Ni/Al System
Kazuhiro Ito
Toshitake Onishi
Masanori Murakami
Article 01 July 2008 Article: 10690901
Characterization and Growth Mechanism of B₁₂As₂ Epitaxial Layers Grown on (1-100) 15R-SiC
Hui Chen
Guan Wang
Yimei Zhu
Article 01 July 2008 Article: 10690803
Effect of Annealing Temperature on SiC Wafer Bow and Warp
Xueping Xu
Chris Martin
Article 01 July 2008 Article: 10690723
Correlation Between the V-I Characteristics of (0001) 4H-SiC PN Junctions Having Different Structural Features and Synchrotron X-ray Topography
Ryoji Kosugi
Toyokazu Sakata
Kazuo Arai
Article 01 July 2008 Article: 10690721
Effect of Base Impurity Concentration on DC Characteristics of Double Ion Implanted 4H-SiC BJTs
Taku Tajima
Satoshi Uchiumi
Tohru Nakamura
Article 01 July 2008 Article: 10690720
Spontaneous and Piezoelectric Polarization Effects on the Frequency Response of Wurtzite Aluminium Gallium Nitride / Silicon Carbide Heterojunction Bipolar Transistors
Choudhury Praharaj
Article 01 July 2008 Article: 10690719
Effective Channel Mobility in Epitaxial and Implanted 4H-SiC Lateral MOSFETs
Sarah Kay Haney
Sei-Hyung Ryu
Mark Johnson
Article 01 July 2008 Article: 10690718
Degradation of Majority Carrier Conductions and Blocking Capabilities in 4H-SiC High Voltage Devices due to Basal Plane Dislocations
Sei-Hyung Ryu
Qingchun Zhang
Anant Agarwal
Article 01 July 2008 Article: 10690717
Impact Ionization in Ion Implanted 4H-SiC Photodiodes
Wei Sun Loh
Eric Z. J. Goh
C. Mark Johnson
Article 01 July 2008 Article: 10690712
High-frequency electron paramagnetic resonance study of the as deposited and annealed carbon-rich hydrogenated amorphous silicon-carbon films
A. V. Vasin
E. N. Kalabukhova
Y. Koshka
Article 01 July 2008 Article: 10690711
Epitaxial Growth on 2° Off-axis 4H SiC Substrates with Addition of HCl
Jie Zhang
Swapna Sunkari
Janna Casady
Article 01 July 2008 Article: 10690710
Observation of Asymmetric Wafer Bending for 3C-SiC Thin Films Grown on Misoriented Silicon Substrates
Marcin Zielinski
Marc Portail
Yvon Cordier
Article 01 July 2008 Article: 10690709
Stress Mapping of SiC Wafers by Synchrotron White Beam X-ray Reticulography
Ning Zhang
Yi Chen
Michael Dudley
Article 01 July 2008 Article: 10690707
Deep-Level Defects in Nitrogen-Doped 6H-SiC Grown by PVT Method
Pawel Kaminski
Michal Kozubal
Emil Tymicki
Article 01 July 2008 Article: 10690704
Propagation and Density Reduction of Threading Dislocations in SiC Crystals during Sublimation Growth
Ping Wu
Xueping Xu
Ilya Zwieback
Article 01 July 2008 Article: 10690701
Factors Influencing the Growth Rate, Doping, and Surface Morphology of the Low-Temperature Halo-Carbon Homoepitaxial Growth of 4H SiC with HCl Additive
Galyna Melnychuk
Huang De Lin
Yaroslav Koshka
Article 01 July 2008 Article: 10690503
Lateral/vertical Homoepitaxial Growth on 4H-SiC Surfaces Controlled by Dislocations
Yoosuf N. Picard
Andrew J. Trunek
Mark E. Twigg
Article 01 July 2008 Article: 10690502
Improved SiC Epitaxial Material for Bipolar Applications
Peder Bergman
Jawad ul Hassan
Erik Janzén
Article 01 July 2008 Article: 10690501
Suitability of 4H-SiC Homoepitaxy for the Production and Development of Power Devices
Christian Hecht
Bernd Thomas
Peter Friedrichs
Article 01 July 2008 Article: 10690404
Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy
Hidekazu Tsuchida
Isaho Kamata
Keiichi Matsuzawa
Article 01 July 2008 Article: 10690403
Silicon Carbide Hot-Wall Epitaxy for Large-Area, High-Voltage Devices
M. J. O’Loughlin
K. G. Irvine
A. A. Burk Jr.
Article 01 July 2008 Article: 10690401
Residual Stress in CVD-grown 3C-SiC Films on Si Substrates
Alex A. Volinsky
Grygoriy Kravchenko
Stephen E. Saddow
Article 01 July 2008 Article: 10690305
Determination of the Core-structure of Shockley Partial Dislocations in 4H-SiC
Yi Chen
Ning Zhang
Michael Dudley
Article 01 July 2008 Article: 10690303
Point Defects in SiC
Ádám Gali
Michel Bockstedte
Erik Janzén
Article 01 July 2008 Article: 10690301
Links Between Etching Grooves Of Partial Dislocations And Their Characteristics Determined By TEM In 4H SiC
Jean-Pierre Ayoub
Michael Texier
Maryse Lancin
Article 01 July 2008 Article: 10690204
Studies of c-Axis Threading Screw Dislocations in Hexagonal SiC
Yi Chen
Xianrong Huang
Michael Dudley
Article 01 July 2008 Article: 10690203
High-resolution Photoinduced Transient Spectroscopy of Defect Centers in Undoped Semi-Insulating 6H-SiC
Pawel Kaminski
Roman Kozlowski
Jaroslaw Zelazko
Article 01 July 2008 Article: 10690201
Influence of Crystal Growth Conditions on Nitrogen Incorporation During PVT Growth of SiC
Darren Hansen
Mark Loboda
Article 01 July 2008 Article: 10690104
Alternative Routes to Porous Silicon Carbide
Bettina Friedel
Siegmund Greulich-Weber
Article 01 July 2008 Article: 10690103
Bulk Growth of SiC
Peter Wellmann
Ralf Müller
Michel Pons
Article 01 July 2008 Article: 10690101