Hydrogen Passivation of Grain Boundaries in Polycrystalline Silicon Deposited by Molecular Beams D. JousseS. L. DelageM. Crowder OriginalPaper 01 August 1987 Article: 359
Effects of Hydrogenation on the Off-State of Polysilicon Thin Film Transistors Babar A. KhanRanjana Pandya OriginalPaper 01 August 1987 Article: 353
Low Temperature Annealing of LPCVD Silicon Films T. AoyamaN. KonishiK. Miyata OriginalPaper 01 August 1987 Article: 347
Diffusion of Atoms Implanted in Poly Silicon Layer on Insulator M. TakaiM. IzumiS. Namba OriginalPaper 01 August 1987 Article: 341
Crystallization of Amorphous LPCVD Silicon Films and Application to Bipolar and Thin Film Transistors Miltiadis K. HatalisDavid W. Greve OriginalPaper 01 August 1987 Article: 335
Poly-Silicon Deposition by Evaporation for TFTs W. SchmollaJ. DiefenbachW. Senske OriginalPaper 01 August 1987 Article: 329
Picosecond Optical Determination of Carrier Lifetime in Polysilicon Films N. K. BambhaW. L. NighanN. M. Johnson OriginalPaper 01 August 1987 Article: 323
Fabrication and Properties of Single, Double, and Triple Gate Polycrystalline-Silicon Thin Film Transistors R. E. ProanoR. J. SoaveD. G. Ast OriginalPaper 01 August 1987 Article: 317
Leakage and Transconductance in Polysilicon Thin Film Transistors: Effect of Grain Boundary Hydrogenation Feng QianDae M. KimGalen H. Kawamoto OriginalPaper 01 August 1987 Article: 311
Effects of Silicon Implantation and Processing Temperature on Performance of Polycrystalline Silicon Thin-Film Transistors Fabricated from Low Pressure Chemical Vapor Deposited Amorphous Silicon Anne ChiangTiao Y. HuangMario Fuse OriginalPaper 01 August 1987 Article: 305
Polysilicon Super Thin Film Transistor Technology Takashi NoguchiHisao HayashiTakefumi Ohshima OriginalPaper 01 August 1987 Article: 293
Characteristics of Arsenic Doped Polycrystalline Silicon-Gate Capacitors After Rapid Thermal Processing R. AngelucciC. Y. WongE. Landi OriginalPaper 01 August 1987 Article: 285
Characterization of Arsenic Implanted Epitaxially Aligned Polysilicon-on-Silicon Films J. L. HoytE. F. CrabbéJ. F. Gibbons OriginalPaper 01 August 1987 Article: 279
Rapid Thermal Annealed Undoped LPCVD Si/Single Crystal Si Substrate Structures with an Implant of Si Near Interfaces S. OgawaS. OkudaY. Yoshioka OriginalPaper 01 August 1987 Article: 273
Structural and Electrical Properties of Heavily-Doped Rapid-thermal-Processed Polysilicon Emitters and Contacts on Silicon Bruha RaicuL. A. ChristelI. Ward OriginalPaper 01 August 1987 Article: 267
Resistivity and Carrier Mobilities in Heavily Doped Polycrystalline Silicon Thin Films Dae M. KimFeng QianSimon Yu OriginalPaper 01 August 1987 Article: 261
A Model for Dopant Pile-Up at the Interface in a Self-Aligned Polysilicon-Emitter Process Dorothea E. BurkShuy-Young Yung OriginalPaper 01 August 1987 Article: 253
Electrical Characterization of Polysilicon-to-Silicon Interfaces E. F. CrabbéJ. L. HoytJ. F. Gibbons OriginalPaper 01 August 1987 Article: 247
Piezoresistive Properties of Boron-Doped PECVD Microcrystalline Silicon Films Shu Wen GuoSong Sheng TanWei Yuan Wang OriginalPaper 01 August 1987 Article: 231
Modelling of the Dislocation Influence on Electrical Properties of Polycrystalline Silicon Cells H. El GhitaniS. Martinuzzi OriginalPaper 01 August 1987 Article: 225
Applications of Polysilicon Films in Microsensors and Microactuators Roger T. Howe OriginalPaper 01 August 1987 Article: 213
Investigation of Impurity Neutralization and Defect Passivation in Polycrystalline Silicon Solar Cells Lawrence L. Kazmerski OriginalPaper 01 August 1987 Article: 199
Sb-Doped Polycrystalline Si Obtained by Means of Sb and Si Thin-Film Reactions S. F. GongA. E. RobertssonH. T. G. Hentzell OriginalPaper 01 August 1987 Article: 193
Redistribution of Boron Implanted into TaSi2/Poly-Si Gates U. SchwalkeC. MazureF. Neppl OriginalPaper 01 August 1987 Article: 187
Low Temperature Oxidation of PTSI on As-Doped Si J. P. GambinoB. CunninghamJ. F. Shepard OriginalPaper 01 August 1987 Article: 181
Formation of PtSi Using Polycrystalline Si and Different Annealing Sequences Chin-An ChangArmin Segmüller OriginalPaper 01 August 1987 Article: 175
Degradation of Micron-Sized Silicide Lines on Polycrystalline Silicon J. Randall PhillipsLung-Ru ZhengJames W. Mayer OriginalPaper 01 August 1987 Article: 155
Degradation of TiSi2/n+-Polysilicon Interfaces Due to High Temperature Processing K. ShenaiP. A. PiacenteB. J. Baliga OriginalPaper 01 August 1987 Article: 149
Kinetic Modeling of Grain Growth in Polycrystalline Silicon Films Doped with Phosphorus and Boron H. J. KimC. V. Thompson OriginalPaper 01 August 1987 Article: 143
Dopant Diffusion and Grain Growth in Arsenic-Implanted Poly-Si L. R. ZhengL. S. HungJ. W. Mayer OriginalPaper 01 August 1987 Article: 135
Microstructural Control through Diffusion-Induced Grain Boundary Migration Carol A. HandwerkerJohn W. Cahn OriginalPaper 01 August 1987 Article: 127
Grain Growth in Polycrystalline Silicon Films C. V. Thompson OriginalPaper 01 August 1987 Article: 115
Conduction and Injection in Off-Stoichiometry Oxides K. T. ChangC. LamK. Rose OriginalPaper 01 August 1987 Article: 107
Interactions of Polysilicon with Aluminum G. OttavianiK. N. TuC. Nobili OriginalPaper 01 August 1987 Article: 106
Structure of Perturbed Twin Boundaries in Silicon Anita GargW. A. T. ClarkJ. P. Hirth OriginalPaper 01 August 1987 Article: 101
Influence of the Decoration by Dislocations on Grain Boundary Passivation by Hydrogen in Silicon L. AmmorG. MathianS. Martinuzzi OriginalPaper 01 August 1987 Article: 95
Grain Boundary Characterization in Polysilicon by Light Beam Induced Current Topography and Image Processing K. MasriJ. P. BoyeauxA. Laugier OriginalPaper 01 August 1987 Article: 89
Structural and Electrical Properties of Molecular Beam Deposited Polycrystalline Silicon Sylvain L. DelageS. J. JengS. S. Iyer OriginalPaper 01 August 1987 Article: 83
On the Temperature Dependence of Resistivity of Polycrystalline Silicon Films Mark S. RodderDimitri A. Antoniadis OriginalPaper 01 August 1987 Article: 77
Grain Boundary States in Float-Zone-Si-Bicrystals G. PetermannP. Haasen OriginalPaper 01 August 1987 Article: 65
Electrical and Electronic Properties of Grain Boundaries in Silicon Hans J. QueisserJürgen H. Werner OriginalPaper 01 August 1987 Article: 53
Quantum Size Effect in Polysilicon Gates N. LifshitzS. LaryiT. T. Sheng OriginalPaper 01 August 1987 Article: 45
Phosphorus Diffusion in Polycrystalline Silicon: Monte Carlo Simulation of Experimental Diffusion Profiles J. P. LavineS. T. LeeC. M. Jarman OriginalPaper 01 August 1987 Article: 39
Microstructures of Polysilicon R. SinclairA. H. CarimJ. C. Bravman OriginalPaper 01 August 1987 Article: 27
Control of Grain Boundary Location By Selective Nucleation Over Amorphous Substrates T. YoneharaY. NishigakiT. Ichikawa OriginalPaper 01 August 1987 Article: 21
A TEM Study of the Structure of Polycrystalline Si Films on (111) Si Substrates Grown by Low Pressure Chemical Vapor Deposition Scott A. PietteChris J. KielyJ. Gary Eden OriginalPaper 01 August 1987 Article: 15
Deposition and Characteristics of Polysilicon Films for Integrated-Circuit Applications Ted Kamins OriginalPaper 01 August 1987 Article: 3
