Volume 105, Issue 1

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December 1987

Symposium F — SiO2 and Its Interfaces

Issue Editors:

G. Lucovsky,
S.T. Pantelides

47 articles in this issue

The Structure of the (001)Si/SiO₂ Interface
A. Ourmazd
J. Bevk
OriginalPaper 22 February 2011 Pages: 1 - 9
Defect Microchemistry at the SiO₂/Si Interface
Gary W. Rubloff
OriginalPaper 22 February 2011 Pages: 11 - 21
Photo-Oxidation of Silicon: Reaction Mechanisms and Film Structure
Ian W. Boyd
OriginalPaper 22 February 2011 Pages: 23 - 34
Scanning Tunneling Microscopy Studies of the Initial Stages of Thin Film Growth: the Role of the Surface Dangling Bonds
Ph Avouris
R. Wolkow
R. J. Hamers
OriginalPaper 22 February 2011 Pages: 35 - 45
Arsenic in SiO₂ - Phase Segregation, Drift, and Diffusion Phenomena
G. K. Celler
L. E. Trimble
L. Pfeiffer
OriginalPaper 22 February 2011 Pages: 47 - 58
Film Growth Mechanism of Photo-Chemical Vapor Deposition
T. Inushima
N. Hirose
S. Yamazaki
OriginalPaper 22 February 2011 Pages: 59 - 70
Low Temperature Plasma Enhanced CVD of ‘Device Quality’ Silicon Dioxide.
J. Batey
E. Tierney
J. Li
OriginalPaper 22 February 2011 Pages: 71 - 71
Control of Bonded SiH in Silicon Oxides Deposited by Remote Plasma Enhanced CVD
D. V. Tsu
G. N. Parsons
M. W. Watkins
OriginalPaper 22 February 2011 Pages: 73 - 84
Study of SiO₂ Formation by Plasma Treatment of SiO Thin Films
J. Perriere
B. Pelloie
M. Fromnt
OriginalPaper 22 February 2011 Pages: 85 - 90
Coupled Diffusion of Ion-Implanted Arsenic in Silicon Dioxide
S. Tong Lee
J. P. Lavine
P. R. Fellinger
OriginalPaper 22 February 2011 Pages: 91 - 96
Effects of Si Implantation on Sb Diffusion In Sb-Silica Spin-On Layers
N. Moriya
R. Kalish
V. Richter
OriginalPaper 22 February 2011 Pages: 97 - 102
Effects of Pre-Gate Oxidation Intrinsic Gettering Upon Thin Gate Oxide Integrity In High Carbon Content CZ Si
S. Hahn
C. Y. Tung
J. Partanen
OriginalPaper 22 February 2011 Pages: 103 - 108
Comparison of Low Temperature Methods for the Production of Silicon Dioxide Thin Films.
Stephen D. Baker
W. I. Milne
S. Taylor
OriginalPaper 22 February 2011 Pages: 109 - 114
Photoassisted Deposition of Silicon Dioxide from Silane and Nitrogen Dioxide
Jeffrey Marks
Robert C. Bowman Jr
Ruby E. Robertson
OriginalPaper 22 February 2011 Pages: 115 - 120
The Electrical Properties of Silicon Oxide Deposited By Remote Plasma Enhanced Chemical Vapor Deposition (Rpecvd).
Sang S. Kim
D. V. Tsu
G. Lucovsky
OriginalPaper 22 February 2011 Pages: 121 - 126
Kinetics of Silicon Oxide Thin Film Deposition From Silane and Disilane with Nitrous Oxide.
Jonathan D. Chapple-Sokol
Carmen J. Giunta
Roy G. Gordon
OriginalPaper 22 February 2011 Pages: 127 - 132
The Chemical Interface of Microwave Plasma Deposited SiO₂ Films
C. C. Parks
B. Robinson
G. J. Coyle Jr.
OriginalPaper 22 February 2011 Pages: 133 - 138
Thermal xidation of silicon in dry oxygen: - the role of crystallographic orientation
K. Taniguchi
C. Hamaguchi
M. Hirayamat
OriginalPaper 22 February 2011 Pages: 139 - 144
The Role of Diatomic SiO in Dry Oxidation of Si
Stanley I. Raider
Robert E. Walkup
OriginalPaper 22 February 2011 Pages: 145 - 150
The Effect of Growth Ambients on the Local Atomic Structure of Thermally Grown Silicon Dioxide Thin Films
J. T. Fitch
G. Lucovsky
OriginalPaper 22 February 2011 Pages: 151 - 156
The Effects of Overlying Layers On The Ftir Spectra of Thin Thermal Oxides On Silicon
J. Neal Cox
R. Rastogi
OriginalPaper 22 February 2011 Pages: 157 - 162
Thermal Oxidation of Amorphous Silicon-Boron Alloy
W. M. Lau
R. Yang
S. K. Wong
OriginalPaper 22 February 2011 Pages: 163 - 168
Electrical, Optical and Structural Properties of Thin SiO₂ Films On Si
N. M. Ravindra
O. L. Russo
K. Vedam
OriginalPaper 22 February 2011 Pages: 169 - 174
Measurement of Optical Absorption in Very Thin Low-Loss SiO₂ Films
Robert M. Curran
Thomas M. Crook
J. David Zook
OriginalPaper 22 February 2011 Pages: 175 - 180
Total Energy Calculation in α-SiO₂ and β-Si₃N₄
Yongnian Xu
W. Y. Ching
OriginalPaper 22 February 2011 Pages: 181 - 186
Structural Inhomogeneities Of SiO₂ Quartz Gláss
Zenon Bochyński
OriginalPaper 22 February 2011 Pages: 187 - 192
Enhanced Conduction In Sipos Films With High Oxygen Content
K. T. Chang
C. Lam
K. Rose
OriginalPaper 22 February 2011 Pages: 193 - 198
Radiation Response of Thin Oxides Grown By Rapid Thermal Oxidation and Rapid Thermal Annealing Techniques
W. K. Schubert
C. H. Seager
OriginalPaper 22 February 2011 Pages: 199 - 204
The Role of Electron and Hole Traps in the Degradation and Breakdown of thermally grown SiO₂ Layers
M. M. Heyns
R. F. De Keersmaecker
OriginalPaper 22 February 2011 Pages: 205 - 218
Formation and Passivation of New Paramagnetic Defects Associated With Thermal Oxides On Silicon
Keith L. Brower
OriginalPaper 22 February 2011 Pages: 219 - 222
The Oxygen Vacancy and The E₁′ Center In SiO₂
Y. Bar-Yam
S. T. Pantelides
M. P. Teter
OriginalPaper 22 February 2011 Pages: 223 - 228
Density Functional Based Studies of Oxygen Vacancies In Crystalline Silicon Dioxide
Mark R. Pederson
Joseph G. Harrison
Barry M. Klein
OriginalPaper 22 February 2011 Pages: 229 - 234
Study of Spatial and Energetical Behavior of Slow Si-SiO₂ Interface States By Tunnel-Dlts Under Fowler-Nordheim Stress
D. Vuillaume
H. Lakhdari
M. Jourdain
OriginalPaper 22 February 2011 Pages: 235 - 240
The SiO₂/Si Interface Probed With Positrons
Bent Nielsen
K. G. Lynn
G. Rubloff
OriginalPaper 22 February 2011 Pages: 241 - 245
Submicron Roughness Determination at the Si-SiO₂ Interface and Correlations to Prccessing Steps and Electronic Properties
Peter O. Hahn
I. Lampert
A. Schnegg
OriginalPaper 22 February 2011 Pages: 247 - 252
Tem Studies of Silicon-Silicon Oxide Interface Roughness
Kyung-Ho Park
T. Sasaki
M. Nakano
OriginalPaper 22 February 2011 Pages: 253 - 258
Analysis of composition changes across the Si/SiO_x interface using fresnel fringe contrast analysis
Frances M. Ross
W. M. Stobbs
OriginalPaper 22 February 2011 Pages: 259 - 264
Charge-Transfer Dipoles at the Si-SiO₂ Interface and the Metal-Semiconductor Worfunction Difference In Mos Devices.
Hisham Z. Massoud
OriginalPaper 22 February 2011 Pages: 265 - 270
Oxidation Kinetics of Ge⁺-Ion Implanted Si
O. W. Holland
C. W. White
D. Fathy
OriginalPaper 22 February 2011 Pages: 271 - 275
The Effect of Ge Segregation on Oxidation of Si
E. C. Frey
N. R. Parikh
W. K. Chu
OriginalPaper 22 February 2011 Pages: 277 - 282
Physical and Chemical Properties of Silicon Dioxide Film Deposited by New Process
Takuji Goda
Hirotsugu Nagayama
Hideo Kawahara
OriginalPaper 22 February 2011 Pages: 283 - 288
Structure of Sol-Gel Silic
C. J. Brinker
R. K. Brow
R. J. Kirkpatrick
OriginalPaper 22 February 2011 Pages: 289 - 294
Electrical Characteristics of Tisi₂/n⁺-Polysilicon/Sio₂/Si Mos Capacitors Stressed Under High Temperature Silicide Processing Conditions
K. Shenai
P. A. Piacente
B. J. Baliga
OriginalPaper 22 February 2011 Pages: 295 - 300
The Effects of Interface Roughness on Ellipsometric Measurements of Thin Oxides
Scott T. Dunham
Bhawana Agrawal
OriginalPaper 22 February 2011 Pages: 301 - 305
Process Dependent Morphology of the Si/SiO₂ Interface Measured with Scanning Tunneling Microscopy
Michael H. Hecht
L. D. Bell
W. J. Kaiser
OriginalPaper 22 February 2011 Pages: 307 - 312
The Mechanism of Oxidation of SiGe.
F. K. LeGoues
R. Rosenberg
B. S. Meyerson
OriginalPaper 22 February 2011 Pages: 313 - 318
LPCVD of Silicon Nitride Films From Hexachlorodisilane and Ammonia
R. C. Taylor
B. A. Scot
OriginalPaper 22 February 2011 Pages: 319 - 324

Volume 105, Issue 1

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