Volume 1, Issue 1

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December 1980

Symposium — Laser and Electron-Beam Solid Interactions in Materials Processing

Issue Editors:

J. F. Gibbons,
L. D. Hess,
T. W. Sigmon

73 articles in this issue

High Power Laser Effects on Unimplanted and Implanted Aluminium Single Crystals
G. Battaglin
A. Carnera
D. K. Sood
OriginalPaper 15 February 2011 Article: 615
Laser Induced Defects and Materials Interactions in the V-Si System
B. R. Appleton
B. Stritzker
S. S. Lau
OriginalPaper 15 February 2011 Article: 607
Pulsed Laser Mixing of Ni-Au Surface Films on Nickel Substrates
P. P. Pronko
H. Wiedersich
P. M. Baldo
OriginalPaper 15 February 2011 Article: 599
Laser Pulse Melting of Metals: Epitaxy and Allotropy
L. Buene
E. N. Kaufmann
C. W. Draper
OriginalPaper 15 February 2011 Article: 591
Laser Irradiation of Nickel: Defect Structures and Surface Alloying
L. Buene
D. C. Jacobson
J. K. Hirvonen
OriginalPaper 15 February 2011 Article: 583
Metastable Alloy Formation in Electron Beam Pulsed Al and Si
S. T. Picraux
D. M. Follstaedt
E. Rimini
OriginalPaper 15 February 2011 Article: 575
Pulsed Laser Annealing of Aluminum
W. R. Wampler
D. M. Follstaedt
P. S. Peercy
OriginalPaper 15 February 2011 Article: 567
Laser Quenched Metal-Silicon Alloys
M. Von Allmen
K. Affolter
M. Wittmer
OriginalPaper 15 February 2011 Article: 559
Beam Induced Reactions in Metal-Film Systems
S. S. Lau
Martti Mäenpää
James W. Mayer
OriginalPaper 15 February 2011 Article: 547
Raman Spectroscopic Evaluation of Silicides Formed with a Scanned Electron Beam
R. J. Nemanich
T. W. Sigmon
S. S. Lau
OriginalPaper 15 February 2011 Article: 541
Post-Irradiation Annealing of Laser-Formed Silicide Layers
M. Wittmer
M. von Allmen
OriginalPaper 15 February 2011 Article: 533
Laser Annealing of the Double-Hetero Si(111)/CoSi₂/Si Structure
Hiroshi Ishiwara
Shuichi Saitoh
Seijiro Furukawa
OriginalPaper 15 February 2011 Article: 525
Silicide Formation using Laser and Electron Beams
T. W. Sigmon
OriginalPaper 15 February 2011 Article: 511
Thermally-Assisted Pulsed-Laser Annealing of SOS
Masayoshi Yamada
Ken-Ichi Yamazaki
Kenji Abe
OriginalPaper 15 February 2011 Article: 503
Laser Growth of Thin Silicon Crystals in Patterned Structures
R. M. Fastow
H. J. Leamy
C. J. Doherty
OriginalPaper 15 February 2011 Article: 495
Laser Induced Crystal Growth of Silicon Islands on Amorphous Substrates
D. K. Biegelsen
N. M. Johnson
M. D. Moyer
OriginalPaper 15 February 2011 Article: 487
Characterization Techniques For Laser-Annealed Polysilicon on Insulating Layers
J. T. Schott
J. J. Comer
OriginalPaper 15 February 2011 Article: 479
Pulsed Laser Recrystallization of Polysilicon: Analysis Via a Novel SEM Technique
Rajiv R. Shah
D. Lloyd Crosthwait
OriginalPaper 15 February 2011 Article: 471
Processing and Properties of CW Laser-Recrystallized Silicon Films on Amorphous Substrates
N. M. Johnson
D. K. Biegelsen
M. D. Moyer
OriginalPaper 15 February 2011 Article: 463
CW Laser-Recrystallized Polysilicon as a Device-Worthy Material
James F. Gibbons
OriginalPaper 15 February 2011 Article: 449
Laser Induced Controlled Nucleation and Growth Process for Large Grained Polycrystalline Silicon
S. C. Danforth
F. Van Gieson
I. Kohatsu
OriginalPaper 15 February 2011 Article: 443
Laser Crystallization of Deposited Silicon Films
G. K. Celler
H. J. Leamy
L. E. Trimble
OriginalPaper 15 February 2011 Article: 435
Laser Epitaxy Over Buried Layers
S. P. Weeks
G. K. Celler
H. J. Leamy
OriginalPaper 15 February 2011 Article: 427
Laser-Induced Solid Phase Epitaxy of Silicon Deposited Films
J. A. Roth
G. L. Olson
L. D. Hess
OriginalPaper 15 February 2011 Article: 413
Formation of SiC, Si₃N₄, and SiO₂ by High-Dose Ion Implantation and Laser Annealing
S. W. Chiang
Y. S. Liu
R. F. Reihl
OriginalPaper 15 February 2011 Article: 407
Effects of Pulsed Laser Irradiation on Thermal Oxides of Silicon
D. Lloyd Crosthwait
Rajiv R. Shah
Robert Mays Jr.
OriginalPaper 15 February 2011 Article: 399
Characterization of Ion-Implanted SiO₂ Properties Applicable to Laser Processing
T. C. Teng
Y. Shiau
L. J. Palkuti
OriginalPaper 15 February 2011 Article: 391
Scanning E-Beam Annealing of Mos Devices
J. D. Speight
A. E. Glaccum
H. Ahmed
OriginalPaper 15 February 2011 Article: 383
Silicon Bipolar Transistors Fabricated Using Ion Implantation and Laser Annealing
Nobuyoshi Natsuaki
Takao Miyazaki
Takashi Tokuyama
OriginalPaper 15 February 2011 Article: 375
Beam Processing in Silicon Device Technology
C. Hill
OriginalPaper 15 February 2011 Article: 361
C-V and Capacitance Transient Analysis of Self-Implanted Amorphous Si Layers Regrown by Swept-Line Electron Beam (SLED) Annealing
K. J. Soda
R. Y. DeJule
B. G. Streetman
OriginalPaper 15 February 2011 Article: 353
Scanned Electron Beam Annealing of Boron-Implanted Diodes
T. O. Yep
R. T. Fulks
R. A. Powell
OriginalPaper 15 February 2011 Article: 345
Cw Argon Ion Laser Annealed B and as Implanted Diodes in Oxide Defined Silicon Devices
T. O. Sedgwick
P. M. Solomon
H. J. Vollmer
OriginalPaper 15 February 2011 Article: 337
Characterization of Al-Si Ohmic Contacts Obtained on Shallow Junctions by Laser and Electron Beam Annealing
A. Armigliato
P. De Luca
S. Solmi
OriginalPaper 15 February 2011 Article: 329
Pulsed Electron Beam Processing of Silicon Devices
A. C. Greenwald
R. P. Dolan
S. P. Tobin
OriginalPaper 15 February 2011 Article: 321
Laser Processing of Silicon for Advanced Microelectronic Devices and Circuits
L. D. Hess
S. A. Kokorowski
G. Yaron
OriginalPaper 15 February 2011 Article: 307
Optimization of Pulsed Annealing Techniques for GaAs Integrated Circuits
G. M. Martin
A. Mitonneau
A. Laugier
OriginalPaper 15 February 2011 Article: 299
Device Performance of Laser Annealed Double Heterostructure GaAlAs Materials
M. J. Brett
J. A. Rostworowski
J. C. Dyment
OriginalPaper 15 February 2011 Article: 295
Laser-Annealed GaP Ohmic Contacts for High-Temperature Devices
O. Eknoyan
W. Van Der Hoeven
J. A. Coquat
OriginalPaper 15 February 2011 Article: 289
Liquid Phase Recrystallization of InSb by CW Laser Irradiation
D. H. Lee
G. L. Olson
L. D. Hess
OriginalPaper 15 February 2011 Article: 281
CW Laser Annealing of Low Dose Implants in GaAs
Yves I. Nissim
James F. Gibbons
OriginalPaper 15 February 2011 Article: 275
Beam Annealing of Ion-Implanted Gaas and Inp
J. C. C. Fan
R. L. Chapman
C. O. Bozler
OriginalPaper 15 February 2011 Article: 261
Laser Annealing of Defects in VPE and Cz Grown Gallium Arsenide with a Pulsed Nd:YAG Laser
P. M. Mooney
J. C. Bourgoin
J. Icole
OriginalPaper 15 February 2011 Article: 255
Pulse Diffused N⁺ Layers in GaAs
D. Eirug Davies
T. G. Ryan
E. F. Kennedy
OriginalPaper 15 February 2011 Article: 247
Behavior of Metastable Te Donor Concentrations in Q-Switched Ruby Laser Annealed GaAs
P. Pianetta
J. Amano
C. A. Stolte
OriginalPaper 15 February 2011 Article: 239
Pulsed-Laser Annealing of Ion-Implanted GaAs: Theory and Exeriment
R. F. Wood
Douglas H. Lowndes
W. H. Christie
OriginalPaper 15 February 2011 Article: 231
Pulsed Ruby Laser Annealing of Zn, Mg, Se and Si Ion Implants in Semiconducting GaAs
Douglas H. Lowndes
J. W. Cleland
R. E. Eby
OriginalPaper 15 February 2011 Article: 223
Transient and Furnace Annealing of Ion Implanted Gallium Arsenide
J. S. Williams
H. B. Harrison
OriginalPaper 15 February 2011 Article: 209
Multiple-Scan E-Beam Method Applied to a Range of Semiconducting Materials
N. J. Shah
R. A. McMahon
H. Ahmed
OriginalPaper 15 February 2011 Article: 201
Dislocation Nucleation, Growth and Suppression During CW Laser Annealing of Silicon
G. A. Rozgonyi
H. Baumgart
F. Phillipp
OriginalPaper 15 February 2011 Article: 193

Volume 1, Issue 1

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