1. Modified sheet resistance and specific contact resistance of Ni-, Pt- and Ti-based contacts to n-type 3C-SiC

   • Patrick W. Leech
   • Martyn H. Kibel
   • Phillip Tanner

   Original Paper 27 May 2021 Pages: 445 - 449

   

2. Application of synchrotron X-ray topography to characterization of ion implanted GaN epitaxial layers for the development of vertical power devices

   • Yafei Liu
   • Hongyu Peng
   • Michael Dudley

   Original Paper 06 July 2021 Pages: 450 - 455

   

3. Investigation of MOCVD grown crack-free 4 μm thick aluminum nitride using nitrogen as a carrier gas

   • Samiul Hasan
   • Abdullah Mamun
   • Asif Khan

   Original Paper 25 May 2021 Pages: 456 - 460

   

4. Correction to: Investigation of MOCVD grown crack‑free 4 μm thick aluminum nitride using nitrogen as a carrier gas

   • Samiul Hasan
   • Abdullah Mamun
   • Asif Khan

   Correction 12 August 2021 Pages: 461 - 461