Volume 1, Issue 54 | MRS Advances

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Volume 1, Issue 54

November 2016

Electronics and Photonics

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6 articles in this issue

Breakthrough performance, reliability and robustness of SiC Junction Transistors
Siddarth Sundaresan
Ranbir Singh
OriginalPaper 07 June 2016 Pages: 3619 - 3630
Reduction in Background Carrier Concentration for 4H-SiC C-face Epitaxial Growth
Johji Nishio
Hirokuni Asamizu
Kazutoshi Kojima
OriginalPaper 10 May 2016 Pages: 3631 - 3636
Al⁺ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics
Roberta Nipoti
Giovanna Sozzi
Roberto Menozzi
OriginalPaper 10 May 2016 Pages: 3637 - 3642
High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy
F. La Via
G. Litrico
S. Coffa
OriginalPaper 10 May 2016 Pages: 3643 - 3647
Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration
J. F. Michaud
R. Khazaka
D. Alquier
OriginalPaper 10 May 2016 Pages: 3649 - 3654
Optimising the Rectification Ratio of Schottky Diodes in n-SiC and n-Si by TCAD
Hiep N. Tran
Tuan A. Bui
Anthony S. Holland
OriginalPaper 16 May 2016 Pages: 3655 - 3660