1. Breakthrough performance, reliability and robustness of SiC Junction Transistors

   • Siddarth Sundaresan
   • Ranbir Singh

   OriginalPaper 07 June 2016 Pages: 3619 - 3630

2. Reduction in Background Carrier Concentration for 4H-SiC C-face Epitaxial Growth

   • Johji Nishio
   • Hirokuni Asamizu
   • Kazutoshi Kojima

   OriginalPaper 10 May 2016 Pages: 3631 - 3636

3. Al⁺ implanted vertical 4H-SiC p-i-n diodes: experimental and simulated forward current-voltage characteristics

   • Roberta Nipoti
   • Giovanna Sozzi
   • Roberto Menozzi

   OriginalPaper 10 May 2016 Pages: 3637 - 3642

4. High growth rate 3C-SiC growth: from hetero-epitaxy to homo-epitaxy

   • F. La Via
   • G. Litrico
   • S. Coffa

   OriginalPaper 10 May 2016 Pages: 3643 - 3647

5. Laser irradiation influence on Si/3C-SiC/Si heterostructures for subsequent 3C-SiC membrane elaboration

   • J. F. Michaud
   • R. Khazaka
   • D. Alquier

   OriginalPaper 10 May 2016 Pages: 3649 - 3654

6. Optimising the Rectification Ratio of Schottky Diodes in n-SiC and n-Si by TCAD

   • Hiep N. Tran
   • Tuan A. Bui
   • Anthony S. Holland

   OriginalPaper 16 May 2016 Pages: 3655 - 3660