1. Performance and Reliability of SiC Power MOSFETs

   • Daniel J. Lichtenwalner
   • Brett Hull
   • John W. Palmour

   OriginalPaper 07 January 2016 Pages: 81 - 89

2. Current Status of the Quality of 4H-SiC Substrates and Epilayers for Power Device Applications

   • M. Dudley
   • H. Wang
   • S. G. Mueller

   OriginalPaper 26 January 2016 Pages: 91 - 102

3. Development of the Nitride Laser Diode Arrays for Video and Movie Projectors

   • Piotr Perlin
   • Szymon Stańczyk
   • Mike Leszczynski

   OriginalPaper 15 February 2016 Pages: 103 - 108

4. Thermal Properties of β-Ga₂O₃ from First Principles

   • Marco D. Santia
   • Nandan Tandon
   • J. D. Albrecht

   OriginalPaper 06 January 2016 Pages: 109 - 114

5. Room Temperature Fabrication of (ZnO)_x(InN)_1-x films with Step-Terrace Structure by RF Magnetron Sputtering

   • Koichi Matsushima
   • Tomoaki Ide
   • Naho Itagaki

   OriginalPaper 06 January 2016 Pages: 115 - 119

6. Scintillation of Un-doped ZnO Single Crystals

   • A. M. Colosimo
   • Jianfeng Ji
   • F. A. Selim

   OriginalPaper 07 January 2016 Pages: 121 - 126

7. Metallic β-Nb₂N Films Epitaxially Grown by MBE on Hexagonal SiC Substrates

   • D. Scott Katzer
   • Neeraj Nepal
   • Matthew T. Hardy

   OriginalPaper 15 January 2016 Pages: 127 - 132

8. Influence of Al, In codoping in enhancing the Figure of Merit of ZnO thin films for TCO Applications

   • Vinoth Kumar Jayaraman
   • Arturo Maldonado Alvarez
   • Maria De la Luz Olvera Amador

   OriginalPaper 19 January 2016 Pages: 133 - 139

9. Reactive sputtering of III-N materials for applications in electronic devices

   • Sameer Joglekar
   • Mohamed Azize
   • Tomás Palacios

   OriginalPaper 19 January 2016 Pages: 141 - 146

10. GaN-on-Diamond HEMTs with 11W/mm Output Power at 10GHz

    • P. C. Chao
    • Kanin Chu
    • John Blevins

    OriginalPaper 07 March 2016 Pages: 147 - 155

11. Modified Linear Transmission Line Model Test Structure for Determining Specific Contact Resistance

    • G. K. Reeves
    • Y. Pan
    • A. S. Holland

    OriginalPaper 01 February 2016 Pages: 157 - 162

12. Effect of rapid thermal treatments on the physical properties of Cobalt Doped ZnO Films

    • C. Davesnne
    • C. Frilay
    • X. Portier

    OriginalPaper 01 February 2016 Pages: 163 - 168

13. Incorporation of Mg into thick free-standing HVPE GaN

    • M. E. Zvanut
    • J. Dashdorj
    • K. Udwary

    OriginalPaper 04 February 2016 Pages: 169 - 174

14. Bandgap Energies of Cubic Al_xGa_1-xN_yAs_1-y Calculated by Means of the Dielectric Method

    • Hiroyuki Naoi
    • Takeyuki Matsumoto

    OriginalPaper 05 February 2016 Pages: 175 - 180

15. Near-Junction Microfluidic Cooling for Wide Bandgap Devices

    • Avram Bar-Cohen
    • Joseph J. Maurer
    • Abirami Sivananthan

    OriginalPaper 09 February 2016 Pages: 181 - 195

16. Recombination Dynamics of InGaN/GaN Multiple Quantum Wells With Different Well Thickness

    • X. C. Wei
    • L. Zhang
    • J. M. Li

    OriginalPaper 17 February 2016 Pages: 197 - 202