Volume 36, Issue 23

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December 2021

Focus Issue on Ultra-wide Bandgap Materials, Devices and Systems

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18 articles in this issue

Ultrawide-bandgap semiconductors: An overview
Man Hoi Wong
Oliver Bierwagen
Hitoshi Umezawa
Overview 28 December 2021 Pages: 4601 - 4615
Theoretical characterization and computational discovery of ultra-wide-band-gap semiconductors with predictive atomistic calculations
Emmanouil Kioupakis
Sieun Chae
Woncheol Lee
Invited Feature Paper-Review 30 November 2021 Pages: 4616 - 4637
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
Ronny Kirste
Biplab Sarkar
Zlatko Sitar
Invited Feature Paper-Review 15 December 2021 Pages: 4638 - 4664
A comprehensive review on the effects of local microstructures and nanoscale chemical features on B-III-nitride films
Jith Sarker
Baishakhi Mazumder
Invited Feature Paper-Review 01 September 2021 Pages: 4665 - 4677
Gas source chemical vapor deposition of hexagonal boron nitride on C-plane sapphire using B₂H₆ and NH₃
Anushka Bansal
Xiaotian Zhang
Joan M. Redwing
Invited Feature Paper 20 December 2021 Pages: 4678 - 4687
Inversion-type p-channel diamond MOSFET issues
Xufang Zhang
Tsubasa Matsumoto
Norio Tokuda
Invited Feature Paper-Review Open access 04 August 2021 Pages: 4688 - 4702
Neural network-based study of structural, chemical and electronic properties of doped \(\hbox {MoO}_{3}\)
Mahesh R. Neupane
Jenille Cruz
Michael N. Groves
Invited Paper 06 October 2021 Pages: 4703 - 4711
Ab initio study of the effect of 2D layer rippling on the electronic properties of 2D/H-terminated diamond (100) heterostructures
Pegah S. Mirabedini
Mahesh R. Neupane
P. Alex Greaney
Invited Paper Open access 27 September 2021 Pages: 4712 - 4724
Status review of the science and technology of PZT/diamond heterostructures and their applications
Manjusha Eledath
Maneesh Chandran
Review 24 August 2021 Pages: 4725 - 4745
Experimental Hall electron mobility of bulk single crystals of transparent semiconducting oxides
Zbigniew Galazka
Klaus Irmscher
Matthias Bickermann
Invited Paper Open access 30 August 2021 Pages: 4746 - 4755
Wet etch, dry etch, and MacEtch of β-Ga₂O₃: A review of characteristics and mechanism
Hsien-Chih Huang
Zhongjie Ren
Xiuling Li
Invited Feature Paper Review 10 November 2021 Pages: 4756 - 4770
Process and characterization of ohmic contacts for beta-phase gallium oxide
Ming-Hsun Lee
Rebecca L. Peterson
Invited Feature Paper-Review 30 August 2021 Pages: 4771 - 4789
First-principles calculations of structural, electrical, and optical properties of ultra-wide bandgap (Al\(_x\)Ga\(_{1-x}\))\(_2\)O\(_3\) alloys
Joel B. Varley
Invited Feature Paper-Review 13 September 2021 Pages: 4790 - 4803
MOCVD growth of (010) β-(Al_xGa_1−x)₂O₃ thin films
A F M Anhar Uddin Bhuiyan
Zixuan Feng
Hongping Zhao
Invited Feature Paper 30 August 2021 Pages: 4804 - 4815
Strain states and relaxation for \(\alpha\)-(Al\(_x\)Ga\(_{1-x}\))\(_2\)O\(_3\) thin films on prismatic planes of \(\alpha\)-Al\(_2\)O\(_3\) in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt
Max Kneiß
Daniel Splith
Marius Grundmann
Invited Paper Open access 22 September 2021 Pages: 4816 - 4831
Gallium oxide-based optical nonlinear effects and photonics devices
Jingan Zhou
Hong Chen
Yuji Zhao
Invited Feature Paper-Review 21 October 2021 Pages: 4832 - 4845
A review of molecular-beam epitaxy of wide bandgap complex oxide semiconductors
William Nunn
Tristan K. Truttmann
Bharat Jalan
Invited Feature Paper-Review 21 September 2021 Pages: 4846 - 4864
Correction to: Strain states and relaxation for \(\alpha\)-(Al\(_x\)Ga\(_{1-x}\))\(_2\)O\(_3\) thin films on prismatic planes of \(\alpha\)-Al\(_2\)O\(_3\) in the full composition range: Fundamental difference of a- and m-epitaxial planes in the manifestation of shear strain and lattice tilt
Max Kneiß
Daniel Splith
Marius Grundmann
Correction 19 October 2021 Pages: 4865 - 4865

Volume 36, Issue 23

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