Determination of molecular orientation in ultrathin liquid crystal. films on solid substrates using X-ray absorption spectroscopy H. WegnerK. WeissC. Wöll Pages: 231 - 234
Structural and superconducting properties of oxygen-deficient GdBaSrCu3Ox (6.5<x<7.0) B. HellebrandR.A. GunasekaranD. Bäuerle Pages: 235 - 240
Nucleation and initial growth of diamond by biased hot filament chemical vapour deposition W.L. WangG. SánchezJ. Esteve Pages: 241 - 249
Characterization of silicon carbide surfaces of 6H-, 15R- and 3C-polytypes by optical second-harmonic generation in comparison with X-ray diffraction techniques C. JordanH. SchillingerR. Sauerbrey Pages: 251 - 257
Excimer-laser ablation and micro-patterning of ceramic Si3N4 J. HeitzJ.D. PedarnigG. Petzow Pages: 259 - 261
Isothermal depolarisation currents in triglycine sulphate: Polarisation along non-ferroelectric crystallographic axes W. Osak Pages: 263 - 264
Absorption and saturation mechanisms in aluminium laser ablated plasmas S. AmorusoM. ArmenanteN. Spinelli Pages: 265 - 271
Dielectric and ferroelectric properties of pulsed-laser deposited BaTiO3 films R. Kullmer Pages: 273 - 279
Tribological properties of chromium implanted silicon nitride ceramics correlated with microstructure F. BrenscheidtE. WieserW. Möller Pages: 281 - 286
Interfacial microstructure and reaction at the spin-coated fluorinated polyimide/Al interface: surface-enhanced X-ray diffraction and TEM studies H.Y. TongF.G. ShiP.K. Vasudev Pages: 287 - 290
Electron mobility of Sr1-xLaxTiO3 ceramics between 600 °C and 1300 °C R. MoosS. SchöllhammerK.H. Härdtl Pages: 291 - 294
Growth and dielectric properties of congruently melting Ba1-xCaxTiO3 crystals C. KuperR. PankrathH. Hesse Pages: 301 - 305
Studies of interface structures of W films grown on patterned and bare Si(100) by TEM Yusuf Atici Pages: 307 - 314
Positron annihilation studies of defects in 3CSiC hot-implanted with nitrogen and aluminum ions Hisayoshi ItohAkira UedonoSadafumi Yoshida Pages: 315 - 323
Carrier freezeout in n-on-p Hg0.7Cd0.3Te photodiode and acceptor level determination J. RenG. NimtzR. Wollrab Pages: 325 - 328
Band gap states of V and Cr in 6H-silicon carbide N. AchtzigerJ. GrillenbergerW. Witthuhn Pages: 329 - 331
Temperature dependence of the InP(001) bulk and surface dielectric function M. ZornT. TrepkL. Samuelson Pages: 333 - 339