Multiple internal reflection spectroscopy of bonded silicon wafers M. ReicheS. HopfeQ. Y. Tong OriginalPaper Pages: 101 - 105
On the applicability of deep-level transient spectroscopy for the investigation of deep centers in silicon created by fast neutron irradiation Ch. M. HardalovK. D. StefanovD. Sueva OriginalPaper Pages: 107 - 109
X-ray absorption spectroscopy study of pulsed-laser-evaporated amorphous carbon films A. GutiérrezJ. DíazM. F. López OriginalPaper Pages: 111 - 114
Determination of the impurity concentration in heavily doped inhomogeneous semiconductors from the measurement of the low-temperature conductivity I. ShlimakR. UssyshkinV. Ginodman OriginalPaper Pages: 115 - 118
The coupling of Cr to Fe studied by circular magnetic X-ray dichroism T. BöskeW. ClemensW. Eberhardt OriginalPaper Pages: 119 - 122
Current spreading and series resistance of proton-implanted vertical-cavity top-surface-emitting lasers W. Nakwaski OriginalPaper Pages: 123 - 127
Combined photoacoustic differential scanning calorimeter cell: Application to phase transitions Ts. VassilevTs. VelinovS. Surnev OriginalPaper Pages: 129 - 134
Light-induced defects in plasma-hydrogenated InP: Zn P. de MierryR. MadelonR. Rizk OriginalPaper Pages: 135 - 140
Shifting of the thermal properties of amorphous germanium films upon relaxation and crystallization W. SzyszkoF. VegaC. N. Afonso OriginalPaper Pages: 141 - 147
Photoluminescence studies in bulk gallium antimonide P.S. DuttaK.S.R. Koteswara RaoV. Kumar OriginalPaper Pages: 149 - 152
Three-dimensional damage distributions of molecular ions implanted into silicon, as recorded by RBS/channeling combined with tomography M. MüllerD. Fink OriginalPaper Pages: 153 - 158
Photothermal deflection spectroscopy of polymer thin films S. K. SoM. H. ChanL. M. Leung OriginalPaper Pages: 159 - 161
Dielectric and optical properties of C60 material studied by ellipsometry and quantitative IR and UV/VIS spectroscopy A. RichterJ. Sturm OriginalPaper Pages: 163 - 170
Thermal Raman shift of the C60 tangentialA g mode L. HolzM. PfeifferA. Lau OriginalPaper Pages: 171 - 175
Time-resolved spectroscopy and energy transfer in Pr3+-doped Gd2(SO4)3·8H2O E. BayerJ. LeppertG. Blasse OriginalPaper Pages: 177 - 181
A new photopyroelectric scheme suitable for phase-transition investigations: The front configuration with semitransparent sensor D. DadarlatA. FrandasD. Bicanic OriginalPaper Pages: 183 - 186
Oxidation of Si(111) promoted by K multilayers: K and SiO2 islands B. LamontagneF. SemondD. Roy OriginalPaper Pages: 187 - 191
Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films W. HellmichG. MüllerS. Kalbitzer OriginalPaper Pages: 193 - 201
On the interpretation of positron-annihilation data in powders and fine-grained materials C. HübnerT. StaabR. Krause-Rehberg OriginalPaper Pages: 203 - 206
Intrinsic and extrinsic defects in semiconductors studied by perturbed γγ angular correlation spectroscopy Th. Wichert OriginalPaper Pages: 207 - 212
Microstructural evolution of ZnS during sintering monitored by optical and positron annihilation techniques M. AdamsP. MascherA. H. Kitai OriginalPaper Pages: 217 - 220
Depth profiling of copper thin films by resonant laser ablation T. M. AllenP. B. KellyN. S. Nogar Rapid Communication Pages: 221 - 225
Oxidation of Si(1 1 1) promoted by K multilayers: K and SiO2 islands B. LamontagneF. SemondD. Roy Pages: 187 - 191