Spatially confined laser-induced damage of Si under a liquid layer G. A. ShafeevA. V. Simakhin OriginalPaper Pages: 311 - 316
Low-order modeling and dynamic characterization of rapid thermal processing C. D. SchaperY. M. ChoT. Kailath OriginalPaper Pages: 317 - 326
Study of excimer laser induced melting and solidification of Si by time-resolved reflectivity measurements I. LukešR. šášikR. Černý OriginalPaper Pages: 327 - 333
Temperature distribution in a film heated with a laser spot: Theory and measurement R. EmmerichS. BauerB. Ploss OriginalPaper Pages: 334 - 339
XeCl laser ablation of yttria stabilized zirconia F. KokaiK. AmanoF. Umemura OriginalPaper Pages: 340 - 342
Effect of oxygen segregation on the surface structure of single-crystalline niobium films on sapphire C. SürgersH. v. Löhneysen OriginalPaper Pages: 350 - 354
Excimer laser ablation of polyimide in a manufacturing facility J. R. Lankard Sr.G. Wolbold OriginalPaper Pages: 355 - 359
Incubation/ablation patterning of polymer surfaces with sub-μm edge definition for optical storage devices S. PreußH.-C. LangowskiM. Stuke OriginalPaper Pages: 360 - 362
Nanosecond and femtosecond excimer laser ablation of fused silica J. IhlemannB. WolffP. Simon OriginalPaper Pages: 363 - 368
Mass flow in laser-plasma deposition of carbon under oblique angles of incidence F. DavanlooE. M. JuengermanE. Matthias OriginalPaper Pages: 369 - 372
Y1Ba2Cu3O7-δ thin films from KrF laser ablation with substrate heating and in situ patterning by CO2 laser radiation E. von der BurgM. DiegelW. Grill OriginalPaper Pages: 373 - 379
Selective deposition of Au films on GaAs by projection-patterned excimer laser doping combined with electroless plating K. SugiokaK. Toyoda OriginalPaper Pages: 380 - 383
Flashlamp-pumped Ti:Sapphire laser with different rods grown by Czochralski and Verneuil methods J. P. BoquillonJ. Said OriginalPaper Pages: 384 - 388
Thin zirconium nitride films prepared by plasma-enhanced CVD H. WendelH. Suhr OriginalPaper Pages: 389 - 392
Comment on interacting diffusion of two dopants through crystalline silicon Fu-bin Li: Appl. Phys. A 51, 318–404 (1990) EditorialNotes Pages: 393 - 393