ROMANS II A two-dimensional process simulator for modeling and simulation in the design of VLSI devices C. D. Maldonado Invited Paper Pages: 119 - 138
Investigation of impurity levels inn-type indium selenide by means of Hall effect and deep level transient spectroscopy A. SeguraK. WünstelA. Chevy Contributed Papers Pages: 139 - 145
Deep levels subsisting in ion implanted silicon after various transient thermal annealing procedures A. MesliJ. C. MullerP. Siffert Contributed Papers Pages: 147 - 152
Temperature and concentration dependence of epitaxial growth rate in Sb and Ga implanted Si S. U. CampisanoChu Te Chang Contributed Papers Pages: 157 - 160
Charge state of ions in liquid metal field ion sources D. R. Kingham Contributed Papers Pages: 161 - 164
Study of the structure of ac(2×2) overlayer of carbon monoxide on Co(001) by LEED intensity measurements M. Maglietta Contributed Papers Pages: 165 - 170