1. Forthcoming papers

   Announcement Pages: A5 - A5

2. Editorial

   • Johannes Heydenreich

   High-Resolution Electron Microscopy Of Semiconductor Interfaces Pages: 375 - 375

3. High-resolution electron microscopy of heterostructures and interfaces

   • H. Cerva
   • H. Oppolzer

   High-Resolution Electron Microscopy Of Semiconductor Interfaces Pages: 377 - 383

4. Atomic-resolution imaging and spectroscopy of semiconductor interfaces

   • S. J. Pennycook
   • N. D. Browning
   • A. J. McGibbon

   High-Resolution Electron Microscopy Of Semiconductor Interfaces Pages: 385 - 391

5. Quantitative characterization of AlAs/GaAs interfaces by high-resolution transmission electron microscopy along the 〈100〉 and the 〈110〉 projection

   • T. Walther
   • D. Gerthsen

   High-Resolution Electron Microscopy Of Semiconductor Interfaces Pages: 393 - 400

6. In_0.2Ga_0.8As/GaAs interface revealed by an AlAs marker layer

   • R. W. Glaisher
   • D. J. H. Cockayne
   • B. F. Usher

   High-Resolution Electron Microscopy Of Semiconductor Interfaces Pages: 401 - 405

7. Compositional and structural characterization of strained Si/Si _x Ge_1−x multilayers and interfaces by high-resolution transmission electron microscopy

   • D. Stenkamp
   • W. Jäger

   High-Resolution Electron Microscopy Of Semiconductor Interfaces Pages: 407 - 414

8. Interfacial reaction barriers during thin-film solid-state reactions: The crystallographic origin of kinetic barriers at the NiS₂/Si(111) interface

   • D. Hesse
   • P. Werner
   • J. Heydenreich

   High-Resolution Electron Microscopy Of Semiconductor Interfaces Pages: 415 - 425

9. Electron traps in wide-gap n-Hg_0.3Cd_0.7Te characterized by time-resolved photoconductivity

   • J. X. Huang
   • G. Barut
   • J. Lange

   Solids And Materials Pages: 427 - 430

10. Semi-metallic behaviour of i-AlCuFe quasicrystals

    • R. Haberkern
    • G. Fritsch
    • M. Härting

    Solids And Materials Pages: 431 - 435

11. Dark build-up of holograms in BaTiO₃ after recording

    • K. Buse
    • J. Frejlich
    • E. Krätzig

    Solids And Materials Pages: 437 - 440

12. The coalescence of silicon layers grown over SiO₂ by liquid-phase epitaxy

    • F. Banhart
    • N. Nagel
    • E. Bauser

    Surfaces And Multilayers Pages: 441 - 448

13. The role of excited species in UV-laser materials ablation

    • B. Luk'yanchuk
    • N. Bityurin
    • D. Bäuerle

    Surfaces And Multilayers Pages: 449 - 455

14. Photochemical etching of GaAs with Cl₂ induced by synchrotron radiation

    • B. Li
    • I. Twesten
    • N. Schwentner

    Surfaces And Multilayers Pages: 457 - 467

15. Ion-beam-induced atomic transport and phase formation in the system nickel/antimony

    • P. Wodniecki
    • M. Uhrmacher

    Surfaces And Multilayers Pages: 469 - 473