1. Ion implantation in IV–VI semiconductors

   • L. Palmetshofer

   Invited Paper Pages: 139 - 153

2. Trap spectrum of the “new oxygen donor” in silicon

   • K. Hölzlein
   • G. Pensl
   • M. Schulz

   Contributed Papers Pages: 155 - 161

3. Constant hole schubweg in Teflon FEP (fluorinated ethylene propylene copolymer)

   • H. von Seggern
   • B. Gross
   • D. A. Berkley

   Contributed Papers Pages: 163 - 166

4. Study of the formation, crystallization and electrical properties of Pd_(0.83−x)X_xSi_0.17 (X=Fe, Co, Ni;x=0.05, 0.10, 0.15) metallic glasses

   • Zhou Xinming
   • H. R. Khan
   • Ch. J. Raub

   Contributed Papers Pages: 167 - 173

5. A new vertically integrated amorphous silicon addressable image sensor

   • A. J. Snell
   • A. Doghmane
   • W. E. Spear

   Contributed Papers Pages: 175 - 178

6. Dynamic RHEED observations of the MBE growth of GaAs

   • J. H. Neave
   • B. A. Joyce
   • P. J. Dobson

   Contributed Papers Pages: 179 - 184

7. Application of the modified sub-regular solution model to the thermodynamic analysis of Al-Ga equilibrium diagrams

   • Zhan Ji-yu

   Contributed Papers Pages: 185 - 187

8. VUV reflectivity of LiNbO₃ and LiTaO₃ single crystals

   • A. M. Mamedov
   • M. A. Osman
   • L. C. Hajieva

   Contributed Papers Pages: 189 - 192

9. Determination of the grain boundary diffusion coefficient from Ag surface coverage in thin Au-Ag film by auger electron spectroscopy

   • A. Bukaluk
   • M. Rozwadowski
   • R. Siuda

   Contributed Papers Pages: 193 - 194

10. Protonicp-n junction

    • J. J. Langer

    Contributed Papers Pages: 195 - 198

11. The thermal conductivities of some low melting materials relevant to energy storage

    • R. Nikolić
    • K. Kelić
    • O. Nešković

    Contributed Papers Pages: 199 - 203

12. Forthcoming papers

    Announcement Pages: A5 - A5