The use of feedback in optical information processing J. CederquistSing H. Lee Invited Paper Pages: 311 - 319
Breakdown field strength of unitary attaching gases and gas mixtures K. P. BrandJ. Kopainsky Contributed Papers Pages: 321 - 333
Models of DNA-dye-complexes: Energy transfer and molecular structures as evaluated by laser excitation A. Anders Contributed Papers Pages: 333 - 338
Work functions and sublimation entropies of the elements H. Schade Contributed Papers Pages: 339 - 344
Electron traps in CdS single crystals obtained by admittance spectroscopy on the hetero- and Schottky junctions A. KobayashiT. Mori Contributed Papers Pages: 345 - 352
Improvedp/n junctions in Ge-doped GaAs grown by molecular beam epitaxy K. PloogA. FischerH. Künzel Contributed Papers Pages: 353 - 356
Influence of circuit and UV prioniser parameters on the performance of a discharge pumped KrF laser O. L. BourneP. E. DyerB. L. Tait Contributed Papers Pages: 357 - 361
High-resolution detection of defects by one dimensional spatial filtering J. ShamirG. Krieger Contributed Papers Pages: 363 - 373
A VUV isochromat spectrometer for surface analysis G. DenningerV. DoseH. Scheidt Contributed Papers Pages: 375 - 380
Computer simulation of low-energy sputtering in the binary collision approximation M. HouM. T. Robinson Contributed Papers Pages: 381 - 389
The sputtering mechanism for low-energy light ions R. BehrischG. MaderlechnerM. T. Robinson Contributed Papers Pages: 391 - 398
Surface recombination and photorefraction in LiNbO3-Fe Crystals P. A. AugustovK. K. Shvarts Contributed Papers Pages: 399 - 401
An investigation of the axial mode behaviour of a helical TEA-CO2 laser B. KronastH. Nishihara Contributed Papers Pages: 403 - 413
Laser-fluctuation measurements in a bath of strong Gaussian noise K. Otsuka Contributed Papers Pages: 415 - 419
Spatial-spectral structure of superluminosity in a high-pressure gas discharge V. Ye. BrazovskyV. N. Lisitsyn Contributed Papers Pages: 421 - 424
Comment on “Evaluation of concentration-depth profiles by sputtering in SIMS and AES” by S. Hofmann R. Shimizu OriginalPaper Pages: 425 - 426
On the density of localized levels in amorphous silicon H. -J. Hoffmann Letter Papers Pages: 427 - 429