Quantum-well Inp-Inl−xGaxPl−zAsz heterostructure lasers grown by liquid phase epitaxy (LPE) E. A. RezekR. ChinR. M. Kolbas OriginalPaper Pages: 1 - 27
Electrical properties of dislocations in ultra-pure germanium G. Scott HubbardEugene E. Haller OriginalPaper Pages: 51 - 66
New method of preparing (100) InP surfaces for schottky barrier and ohmic contact formation D. K. Skinner OriginalPaper Pages: 67 - 78
Silicon ribbons made by roller quenching methods N. TsuyaK. I. AraiA. Kuroiwa OriginalPaper Pages: 111 - 128
Electron resonance study of hydrogen-containing WO3 films J. H. PiferE. K. Sichel OriginalPaper Pages: 129 - 140
An assessment of the suitability of rf sputtered amorphous hydrogenated Si as a potential solar cell material D. A. AndersonG. ModdelWilliam Paul OriginalPaper Pages: 141 - 152
Current controlled liquid phase epitaxial growth of Hgl−xCdxTe P. E. VanierFred H. PollakPaul M. Raccah OriginalPaper Pages: 153 - 164
Preparation, analysis and properties of high purity Zn(l−x)MgxTe alloys G. RevelJ. L. PastolJ. F. Rommeluere OriginalPaper Pages: 165 - 184
A comparison between atomic concentration profiles and defect density profiles in GaAs annealed after implantation with beryllium K. S. LeeJ. M. EssJ. Comas OriginalPaper Pages: 185 - 196
Effects of laser irradiation on phosphorus diffused layers in silicon E. FogarassyR. StuckP. Siffert OriginalPaper Pages: 197 - 209
