Gamma-induced trapping levels in si with and without gold doping C. E. Barnes OriginalPaper Pages: 437 - 457
High temperature annealing of mnos devices and its effect on si-nitride stress, interface charge density and memory properties R. Hezel OriginalPaper Pages: 459 - 484
Photoluminescence characterization of solution and lec grown InP D. BarthruffK. W. BenzG. A. Antypas OriginalPaper Pages: 485 - 491
Surface effects in sem measurements of hole diffusion length in n-GaAs D. L. PartinA. G. MilnesL. F. Vassamillet OriginalPaper Pages: 493 - 499
Photoionization cross-sections and energy levels of gold, iron, platinum, silver, and titanium in silicon M. OkuyamaN. MatsunagaA. G. Milnes OriginalPaper Pages: 501 - 515
Acoustic emission study of defects in gallium phosphide light emitting diodes T. IkomaM. OguraY. Adachi OriginalPaper Pages: 529 - 543
Liquid phase epitaxial growth of InAs1-xSbx on GaSb E. R. GertnerA. M. AndrewsR. A. Riedel OriginalPaper Pages: 545 - 554