Gallium nitride emitting devices preparation and properties G. JacobM. BoulouD. Bois OriginalPaper Pages: 499 - 514
Preparation and characteristics of white EL display panels Zoltan SzepesiWilli LehmannDavid Leksell OriginalPaper Pages: 515 - 524
Activation analytical investigation of contamination and cross-contamination in ion implantation E. W. HaasH. GlawischnigA. Bleier OriginalPaper Pages: 525 - 533
Tsc measurements of coupled levels in ion implanted Si J. LudmanS. RoosildV. Vickers OriginalPaper Pages: 535 - 546
Annealing studies of Be-implanted GaAs0.6P0.4 W. V. McLevigeK. V. VaidyanathanL. Plew OriginalPaper Pages: 547 - 558
Influence of substoichiometry, hydrogen content and crystallinity on the optical and electrical properties of HxWOy thin films A. DeneuvilleP. GĂ©rard OriginalPaper Pages: 559 - 588
A comparison of gamma-induced degradation and forward bias-induced degradation in GaP:Zn,0 LEDs C. E. Barnes OriginalPaper Pages: 589 - 617