Modeling of the Structural Properties of Hg1–x Cd x Te J.D. BensonM. Martinka OriginalPaper 18 June 2008 Pages: 1166 - 1170
Surface Morphology and Defect Formation Mechanisms for HgCdTe (211)B Grown by Molecular Beam Epitaxy Yong ChangC.R. BeckerV. Nathan OriginalPaper 10 June 2008 Pages: 1171 - 1183
Status of LWIR HgCdTe-on-Silicon FPA Technology M. CarmodyJ.G. PaskoN.K. Dhar OriginalPaper 07 June 2008 Pages: 1184 - 1188
MBE HgCdTe on Alternative Substrates for FPA Applications Li HeXiangliang FuWei Lu OriginalPaper 31 May 2008 Pages: 1189 - 1199
Characterization of PbSnSe/CdTe/Si (211) Epilayers Grown by Molecular Beam Epitaxy X.J. WangC. FulkS. Sivananthan OriginalPaper 28 May 2008 Pages: 1200 - 1204
Electromagnetic Modeling of n-on-p HgCdTe Back-Illuminated Infrared Photodiode Response O. GravrandS. Gidon OriginalPaper 28 May 2008 Pages: 1205 - 1211
Reduction of Inclusions in (CdZn)Te and CdTe:In Single Crystals by Post-Growth Annealing E. BelasM. BugárP. Höschl OriginalPaper 23 May 2008 Pages: 1212 - 1218
Thermoelectric Effect Spectroscopy and Photoluminescence of High-Resistivity CdTe:In Hassan ElhadidyJan FrancPavel Hoschl OriginalPaper 13 May 2008 Pages: 1219 - 1224
Morphology of Inductively Coupled Plasma Processed HgCdTe Surfaces A.J. StoltzJ.D. BensonP.J. Smith OriginalPaper 10 May 2008 Pages: 1225 - 1230
Structural Analysis of CdTe Hetero-epitaxy on (211) Si J.D. BensonR.N. JacobsU. Lee OriginalPaper 06 May 2008 Pages: 1231 - 1236
ZnO TFT Devices Built on Glass Substrates J. ZhuH. ChenS.T. Hsu OriginalPaper 02 May 2008 Pages: 1237 - 1240
Traces of HgCdTe Defects as Revealed by Etch Pits J.R. YangX.L. CaoL. He OriginalPaper 01 May 2008 Pages: 1241 - 1246
Plasma-Cleaned InSb (112)B for Large-Area Epitaxy of HgCdTe Sensors M. Jaime-VasquezM. MartinkaJ.K. Markunas OriginalPaper 01 May 2008 Pages: 1247 - 1254
Strain Reduction in Selectively Grown CdTe by MBE on Nanopatterned Silicon on Insulator (SOI) Substrates R. BommenaT. SeldrumS.R.J. Brueck OriginalPaper 30 April 2008 Pages: 1255 - 1260
Impulse Response Time Measurements in Hg0.7Cd0.3Te MWIR Avalanche Photodiodes Gwladys PerraisJohan RothmanJean-Paul Chamonal OriginalPaper 25 April 2008 Pages: 1261 - 1273
MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection M. ReddyJ.M. PetersonS.M. Johnson OriginalPaper 23 April 2008 Pages: 1274 - 1282
Nonequilibrium Operation of Arsenic Diffused Long-Wavelength Infrared HgCdTe Photodiodes Priyalal S. WijewarnasuriyaP.Y. EmelieNibir K. Dhar OriginalPaper 23 April 2008 Pages: 1283 - 1290
As Doping in (Hg,Cd)Te: An Alternative Point of View Janet E. HailsStuart J.C. IrvineAndrew Graham OriginalPaper 23 April 2008 Pages: 1291 - 1302
Latest Developments of HgCdTe e-APDs at CEA LETI-Minatec Johan RothmanGwladys PerraisJ.-P. Chamonal OriginalPaper 18 April 2008 Pages: 1303 - 1310
Nanowires in the CdHgTe Material System R. HaakenaasenE. SelvigJ. Orr OriginalPaper 16 April 2008 Pages: 1311 - 1317
Noise Attributes of LWIR HDVIP HgCdTe Detectors A.I. D’SouzaM.G. StapelbroekH.D. Shih OriginalPaper 09 April 2008 Pages: 1318 - 1323
Al- and Al:In-Doped ZnO Thin Films Deposited by RF Magnetron Sputtering for Spacecraft Charge Mitigation C. LennonR. KodamaM. Deshpande OriginalPaper 08 April 2008 Pages: 1324 - 1328
Junction Stability in Ion-Implanted Mercury Cadmium Telluride D. ChandraH.F. SchaakeM.A. Kinch OriginalPaper 04 April 2008 Pages: 1329 - 1333
Gated IR Imaging with 128 × 128 HgCdTe Electron Avalanche Photodiode FPA Jeff BeckMilton WoodallJim Robinson OriginalPaper 04 April 2008 Pages: 1334 - 1343
Nanotrenches Induced by Catalyst Particles on ZnSe Surfaces S.K. ChanS.K. LokI.K. Sou OriginalPaper 28 March 2008 Pages: 1344 - 1348
Numerical Analysis of a Very Long-Wavelength HgCdTe Pixel Array for Infrared Detection Danilo D’OrsognaStephen P. TobinEnrico Bellotti OriginalPaper 27 March 2008 Pages: 1349 - 1355
Effects of Surface Processing on the Response of CZT Gamma Detectors: Studies with a Collimated Synchrotron X-Ray Beam A. HossainA.E. BolotnikovR.B. James OriginalPaper 26 March 2008 Pages: 1356 - 1361
Modeling of LWIR HgCdTe Auger-Suppressed Infrared Photodiodes under Nonequilibrium Operation P.Y. EmelieS. VelicuN.K. Dhar OriginalPaper 22 March 2008 Pages: 1362 - 1368
Anisotropic Surface Roughness in Molecular-Beam Epitaxy CdTe (211)B/Ge(211) Giacomo BadanoXavier BaudryArnaud Etcheberry OriginalPaper 22 March 2008 Pages: 1369 - 1375
Characterization of HgCdTe MWIR Back-Illuminated Electron-Initiated Avalanche Photodiodes M.B. ReineJ.W. MarciniecG.M. Williams OriginalPaper 22 March 2008 Pages: 1376 - 1386
Modeling of Copper SIMS Profiles in Thin HgCdTe H.F. SchaakeM.A. KinchF. Aqariden OriginalPaper 21 March 2008 Pages: 1387 - 1390
Fabrication and Characterization of MOVPE-Grown CdTe-on-Si Heterojunction Diode-Type Gamma-Ray Detectors M. YokotaK. YasudaY. Agata OriginalPaper 21 March 2008 Pages: 1391 - 1395
Substrate-Removed HgCdTe-Based Focal-Plane Arrays for Short-Wavelength Infrared Astronomy E.C. PiquetteD.D. EdwallJ. Auyeung OriginalPaper 21 March 2008 Pages: 1396 - 1400
High-Operating-Temperature MWIR Detector Diodes H.F. SchaakeM.A. KinchH.D. Shih OriginalPaper 21 March 2008 Pages: 1401 - 1405
MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient Heuristic W.E. TennantDonald LeeMichael Carmody OriginalPaper 21 March 2008 Pages: 1406 - 1410
Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT S.L. ElizondoF. ZhaoZ. Shi OriginalPaper 21 March 2008 Pages: 1411 - 1414
Modeling of Recombination in HgCdTe C.H. GreinM.E. FlattéYong Chang OriginalPaper 18 March 2008 Pages: 1415 - 1419
An Initial Investigation of Nitrogen Doping of Wide-Bandgap HgCdTe During Molecular-Beam Epitaxy Using Ar/N Plasmas T.J. de LyonR.D. RajavelS.M. Johnson OriginalPaper 18 March 2008 Pages: 1420 - 1425
ZnO and Related Materials for Sensors and Light-Emitting Diodes S.J. PeartonW.T. LimA. Osinsky OriginalPaper 18 March 2008 Pages: 1426 - 1432
MBE-Grown Cubic ZnS Nanowires S.K. ChanS.K. LokI.K. Sou OriginalPaper 05 February 2008 Pages: 1433 - 1437
Light-Induced Tellurium Enrichment on CdZnTe Crystal Surfaces Detected by Raman Spectroscopy Samantha A. HawkinsEliel Villa-AlemanDavid R. Black OriginalPaper 09 April 2008 Pages: 1438 - 1443
Defects in HgTe and CdHgTe Grown by Molecular Beam Epitaxy E. SelvigC.R. TonheimR. Haakenaasen OriginalPaper 09 April 2008 Pages: 1444 - 1452
A Theoretical Model for the HgCdTe Electron Avalanche Photodiode Michael A. Kinch OriginalPaper 09 April 2008 Pages: 1453 - 1459
Vapor-Phase Growth of Bulk Crystals of Cadmium Telluride and Cadmium Zinc Telluride on Gallium Arsenide Seeds J.T. MullinsB.J. CantwellB.K. Tanner OriginalPaper 08 April 2008 Pages: 1460 - 1464
LWIR HgCdTe Detectors Grown on Ge Substrates M.F. VilelaD.D. LofgreenM.Z. Tidrow OriginalPaper 08 April 2008 Pages: 1465 - 1470
Effect of Atmosphere on n-Type Hg1–x Cd x Te Surface after Different Wet Etching Treatments: An Electrical and Structural Study R. KiranR. SporkenS. Sivananthan OriginalPaper 13 June 2008 Pages: 1471 - 1479
Relevance of Thermal Mismatch in Large-Area Composite Substrates for HgCdTe Heteroepitaxy R.N. JacobsL.A. AlmeidaM. Kim OriginalPaper 18 July 2008 Pages: 1480 - 1487
Avalanche Mechanism in p +-n −-n + and p +-n Mid-Wavelength Infrared Hg1−x Cd x Te Diodes on Si Substrates Shubhrangshu MallickKoushik BanerjeeJun Zhao OriginalPaper 20 August 2008 Pages: 1488 - 1496
Epitaxial Lead Chalcogenides on Si for Mid-IR Detectors and Emitters Including Cavities H. ZoggM. ArnoldJ. Dual OriginalPaper 06 August 2008 Pages: 1497 - 1503