Low-temperature processing of antimony-implanted silicon T. AlzankiR. GwilliamB. J. Sealy Regular Issue Paper Pages: 767 - 769
The reaction characteristics of ultra-thin Ni films on undoped and doped Si (100) Yu-Long JiangGuo-Ping RuBing-Zong Li Regular Issue Paper Pages: 770 - 773
Large-area oxidation of AlAs layers for dielectric stacks and thick buried oxides S. N. TandonJ. T. GopinathE. P. Ippen Regular Issue Paper Pages: 774 - 779
A dry-patterned Cu(Mg) alloy film as a gate electrode in a thin-film transistor liquid crystal display H. J. YangY. K. KoJ. G. Lee Regular Issue Paper Pages: 780 - 785
Low-temperature crystallization of amorphous silicon using Cu field-aided lateral crystallization at 350°C Kyoung-Wan ParkKi-Taek ChoDuck-Kyun Choi Regular Issue Paper Pages: 786 - 789
Effects of phosphorus content on the reaction of electroless Ni-P with Sn and crystallization of Ni-P Y. C. SohnJin YuW. K. Choi Regular Issue Paper Pages: 790 - 795
Electromigration and integration aspects for the copper-SiLK system H. S. TsengBi-Shiou ChiouC. C. Ho Regular Issue Paper Pages: 796 - 801
Excess Si atoms near the pyrolytic-gas-passivated ultrathin silicon oxide/Si(100) interface Hiroshi Yamada Regular Issue Paper Pages: 802 - 808
Er2O3 for high-gain waveguide amplifiers Sajan SainiKevin ChenMichal Lipson Regular Issue Paper Pages: 809 - 814
Lattice instability in ZnSe:Ni crystal V. V. GudkovA. T. LonchakovN. B. Gruzdev Regular Issue Paper Pages: 815 - 818
Silicon nano-asperities: Morphological evolution and electrical properties of double-polysilicon interlayers R. EdreiE. N. ShaulyA. Hoffman Regular Issue Paper Pages: 819 - 825
Growth and characterization of ZnO thin films on GaN epilayers T. P. SmithH. A. McLeanR. F. Davis Regular Issue Paper Pages: 826 - 832
Growth and characterization of totally relaxed InGaAs thick layers on strain-relaxed paramorphic InP substrates Mouloud BoudaaP. RegrenyG. Hollinger Regular Issue Paper Pages: 833 - 839
Study of Ti/W/Cu, Ti/Co/Cu, and Ti/Mo/Cu multilayer structures as schottky metals for GaAs diodes H. C. ChangC. S. LeeJ. Z. He Regular Issue Paper Pages: L15 - L17
Intermetallic compounds formed during the reflow and aging of Sn-3.8Ag-0.7Cu and Sn-20In-2Ag-0.5Cu solder ball grid of Sn-3.8Ag-0.7Cu and Sn-20In-2Ag-0.5Cu solder ball grid array packages M. D. ChengS. Y. ChangT. H. Chuang Erratum Pages: L18 - L18