Conductivity modification of silver salt-filled polyimide film by pulsed KrF laser Z. KocsisB. HoppI. Mojzes Regular Issue Paper Pages: 239 - 243
The characteristics of Zn-doped InP using spin-on dopant as a diffusion source K. H. YoonY. H. LeeS. J. Kim Regular Issue Paper Pages: 244 - 247
Cathodoluminescence of blue ZnGa2O4 with In2O3-mixed phosphor Su-Hua YangMeiso Yokoyama Regular Issue Paper Pages: 248 - 252
Underfill constraint effects during thermomechanical cycling of flip-chip solder joints I. DuttaA. GopinathC. Marshall Regular Issue Paper Pages: 253 - 264
Effect of burn-in on shear strength of 63Sn-37Pb solder joints on an Au/Ni/Cu substrate Michael Raj Marks Regular Issue Paper Pages: 265 - 271
Effects of electric potential on chemical-mechanical polishing of copper G. Helen XuHong Liang Regular Issue Paper Pages: 272 - 277
Zn-Al based alloys as Pb-free solders for die attach M. RettenmayrP. LambrachtC. Tschudin Regular Issue Paper Pages: 278 - 285
Thermomechanical effects in embedded passive materials A. J. SlifkaE. S. Drexler Regular Issue Paper Pages: 286 - 291
Microstructural characterization of damage in thermomechanically fatigued Sn-Ag based solder joints S. ChoiJ. G. LeeT. R. Bieler Regular Issue Paper Pages: 292 - 297
Effect of oxidation on the thermoelectric properties of PbSe thin films E. I. RogachevaT. V. TavrinaM. S. Dresselhaus Regular Issue Paper Pages: 298 - 303
Plastic deformation kinetics of electrodeposited Cu foil at low and intermediate homologous temperatures Hans ConradDi Yang Regular Issue Paper Pages: 304 - 312
Valence-band discontinuities between InGaN and GaN evaluated by capacitance-voltage characteristics of p-InGaN/n-GaN diodes Toshiki MakimotoKazuhide KumarkuraNaoki Kobayashi Regular Issue Paper Pages: 313 - 315
Localization of excited carriers in organometallic vapor-phase epitaxial grown ZnxCd1−xSe epilayers with partial existence of lateral compositionally modulated superlattice X. B. ZhangK. S. WongS. K. Hark Regular Issue Paper Pages: 316 - 320
Thermodynamic modeling of native point defects and dopants of GaN semiconductors Jing-Bo LiJean-Claude Tedenac Regular Issue Paper Pages: 321 - 326
Electrical and growth characteristics of Au/Al0.15Ga0.85N:Si structures with various Si incorporations Cheul-Ro Lee Regular Issue Paper Pages: 327 - 331