LPE HgCdTe on sapphire status and advancements G. BostrupK. L. HessR. Haines Special Issue Paper Pages: 560 - 565
Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates J. B. VaresiR. E. BornfreundJ. E. Jensen Special Issue Paper Pages: 566 - 573
MCT technology challenges for mass production Philippe TriboletJean-Pierre ChatardSylvain Paltrier Special Issue Paper Pages: 574 - 584
Current mechanisms in VLWIR Hg1−xCdxTe photodiodes A. I. D'SouzaR. E. DewamesJ. M. Arias Special Issue Paper Pages: 585 - 589
A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays W. E. TennantM. ThomasJ. H. Dinan Special Issue Paper Pages: 590 - 594
Galvanomagnetic properties of CdTe below and above the melting point J. FrancP. HöschlP. Moravec Special Issue Paper Pages: 595 - 602
Photoluminescence measurements on undoped CdZnTe grown by the high-pressure bridgman method K. SuzukiS. SetoK. Inabe Special Issue Paper Pages: 603 - 607
Improved morphology and crystalline quality of MBE CdZnTe/Si L. A. AlmeidaS. HirschJ. H. Dinan Special Issue Paper Pages: 608 - 610
Infrared absorption behavior in CdZnTe substrates S. SenD. R. RhigerM. C. Currie Special Issue Paper Pages: 611 - 618
MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays K. D. MaranowskiJ. M. PetersonJ. E. Jensen Special Issue Paper Pages: 619 - 622
TEM investigation of defects in arsenic doped layers grown in-situ by MBE Majid ZandianEdward Goo Special Issue Paper Pages: 623 - 626
MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations E. C. PiquetteM. ZandianJ. M. Arias Special Issue Paper Pages: 627 - 631
Characterization of cross-hatch morphology of MBE (211) HgCdTe M. MartinkaL. A. AlmeidaJ. H. Dinan Special Issue Paper Pages: 632 - 636
Improvement of the accuracy of the In-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures M. DaraseliaJ. W. GarlandS. Sivananthan Special Issue Paper Pages: 637 - 642
Composition control of long wavelength MBE HgCdTe using In-situ spectroscopic ellipsometry Dennis EdwallJamie PhillipsJose Arias Special Issue Paper Pages: 643 - 646
ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application S. K. HongY. ChenT. Yao Special Issue Paper Pages: 647 - 658
ZnO growth toward optical devices by MOVPE using N2O K. OgataK. MaejimaSg. Fujita Special Issue Paper Pages: 659 - 661
A novel approach for the complete removal of threading dislocations from ZnSe on GaAs (001) X. G. ZhangI. A. RodriguezJ. E. Ayersi Special Issue Paper Pages: 667 - 672
MBE-Grown ZnMgS ultra-violet photodetectors I. K. SouMarcus C. W. WuG. K. L. Wong Special Issue Paper Pages: 673 - 676
Optical properties of molecular beam epitaxy-grown ZnSexTe1−x II–VI semiconductor alloys F. C. PeirisU. BindleyJ. K. Furdyna Special Issue Paper Pages: 677 - 681
Summary of HgCdTe 2D array technology in the U.K. I. M. BakerC. D. Maxey Special Issue Paper Pages: 682 - 689
Estimation of the p-n junction depth in LWIR HgCdTe detectors from the spatial profile of the lateral photocurrent and transverse photovoltage induced by an infrared small spot V. GarberA. DustG. Bahir Special Issue Paper Pages: 690 - 695
Diffusion length measurements in p-HgCdTe using laser beam induced current D. A. RedfernJ. A. ThomasL. Faraone Special Issue Paper Pages: 696 - 703
Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes G. BahirV. GarberA. Dust Special Issue Paper Pages: 704 - 710
HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation S. VelicuG. BadanoR. Ashokan Special Issue Paper Pages: 711 - 716
MBE growth and device processing of MWIR HgCdTe on large area Si substrates G. BrillS. VelicuS. Sivananthan Special Issue Paper Pages: 717 - 722
Growth of long wavelength infrared MCT emitters on conductive substrates C. D. MaxeyM. U. AhmedT. Ashley Special Issue Paper Pages: 723 - 727
Transition metal doped cadmium manganese telluride: A new material for tunable mid-infrared lasing S. B. TrivediS. W. KutcherGary Green Special Issue Paper Pages: 728 - 732
Antireflective structures in CdTe and CdZnTe surfaces by ECR plasma etching A. J. StoltzM. R. BanishP. R. Boyd Special Issue Paper Pages: 733 - 737
Near-IR comparative characterization of optical second-order nonlinearities in Te-based semiconductors A. ZappettiniS. M. PietralungaM. Martinelli Special Issue Paper Pages: 738 - 742
High-pressure bridgman grown CdZnTe for electro-optic applications A. ZappettiniL. CeratiM. Martinelli Special Issue Paper Pages: 743 - 747
Self-ordered CdSe quantum dots in ZnSe and (Zn, Mn)Se Matrices Assessed by transmission electron microscopy and photoluminescence spectroscopy P. MöckT. TopuriaJ. K. Furdyna Special Issue Paper Pages: 748 - 755
Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers Eliezer WeissOlga KlinYehuda Juravel Special Issue Paper Pages: 756 - 761
p-to-n type-conversion mechanisms for HgCdTe exposed to H2/CH4 plasmas J. WhiteR. PalP. Burke Special Issue Paper Pages: 762 - 767
Contactless junction contrast of HgCdTe n-on-p-type structures obtained by reactive ion etching induced p-to-n conversion E. A. GluszakS. Hinckley Special Issue Paper Pages: 768 - 773
DC photoconductivity study of semi-insulating Cd1−xZnxTe crystals Y. CuiG. W. WrightA. Burger Special Issue Paper Pages: 774 - 778
HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy P. MitraF. C. CaseP. W. Norton Special Issue Paper Pages: 779 - 784
The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy B. L. VanmilA. J. PtakR. D. Smith Special Issue Paper Pages: 785 - 788
On the kinetics of the activation of arsenic as a p-type dopant in Hg1−xCdxTe H. F. Schaake Special Issue Paper Pages: 789 - 793
Defect reduction in Hg1−xCdxTe grown by molecular beam epitaxy on Cd0.96Zn0.04Te(211)B F. AqaridenH. D. ShihP. K. Liao Special Issue Paper Pages: 794 - 796
Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding Takao IshiiShinji AoyamaMasami Tokumitsu Letter Pages: L25 - L27