Low bias dry etching of III-nitrides in Cl2-based inductively coupled plasmas Hyun ChoC. B. VartuliC. Constantine Special Issue Paper Pages: 166 - 170
Non-equilibrium electron distributions and electron-longitudinal optical phonon scattering rates in wurtzite GaN K. T. TsenD. K. FerryH. Morkoç Special Issue Paper Pages: 171 - 174
Improved sidewall morphology on dry-etched SiO2 masked GaN features F. RenS. J. PeartonJ. Han Special Issue Paper Pages: 175 - 178
Si-implantation activation annealing of GaN up to 1400°C J. C. ZolperJ. HanR. A. Stall Special Issue Paper Pages: 179 - 184
Iron nitride mask and reactive ion etching of GaN films Heon LeeJames S. Harris Jr. Special Issue Paper Pages: 185 - 189
In-situ reflectance monitoring during MOCVD of AlGaN T. B. NgJ. HanM. V. Weckwerth Special Issue Paper Pages: 190 - 195
Study of contact resistivity, mechanical integrity, and thermal stability of Ti/Al and Ta/Al ohmic contacts to n-type GaN B. P. LutherS. E. MohneyR. F. Karlicek Jr. Special Issue Paper Pages: 196 - 199
Electronic structure of wurtzite- and zinc blende-GaN studied by angle-resolved photoemission Takahiro MaruyamaYutaka MiyajimaHiroo Kato Special Issue Paper Pages: 200 - 205
P- and N-type doping of GaN and AlGaN epitaxial layers grown by metalorganic chemical vapor deposition C. J. EitingP. A. GrudowskiR. D. Dupuis Special Issue Paper Pages: 206 - 209
Transport coefficients of AlGaN/GaN heterostructures M. AhoujjaW. C. MitchelJ. S. Flynn Special Issue Paper Pages: 210 - 214
Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition G. S. SudhirH. FujiiE. R. Weber Special Issue Paper Pages: 215 - 221
Optical properties and recombination mechanisms in GaN and GaN:Mg grown by metalorganic vapor phase epitaxy G. P. YablonskiiA. L. GurskiiH. Juergensen Special Issue Paper Pages: 222 - 228
Acceptor and donor doping of AlxGa1−xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy M. D. BremserW. G. PerryR. F. Davis Special Issue Paper Pages: 229 - 232
Lateral epitaxial overgrowth of GaN films on SiO2 areas via metalorganic vapor phase epitaxy Ok-Hyun NamTsvetanka S. ZhelevaRobert F. Davis Special Issue Paper Pages: 233 - 237
Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AIN and GaN thin films on α(6H)-SiC substrates A. D. HanserC. A. WoldenR. F. Davis Special Issue Paper Pages: 238 - 245
Excitation mechanisms of multiple Er3+ sites in Er-implanted GaN S. KimS. J. RheeP. B. Klein Special Issue Paper Pages: 246 - 254
The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-Type GaN A. T. PingQ. ChenI. Adesida Special Issue Paper Pages: 261 - 265
Extended defects in wurtzite nitride semiconductors V. PotinP. VermautG. Nouet Special Issue Paper Pages: 266 - 275
Growth optimization and doping with Si and Be of high quality GaN on Si(111) by molecular beam epitaxy M. A. Sánchez-GarcíaE. CallejaJ. M. Blanco Special Issue Paper Pages: 276 - 281
Dopant-selective photoenhanced wet etching of GaN C. YoutseyG. BulmanI. Adesida Special Issue Paper Pages: 282 - 287
GaN grown by hydride vapor phase epitaxy on p-type 6H-SiC layers A. E. NikolaevS. V. RendakovaV. A. Dmitriev Special Issue Paper Pages: 288 - 291
Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxy S. V. RendakovaI. P. NikitinaV. A. Dmitriev Special Issue Paper Pages: 292 - 295
Electrical characteristics of rectifying polycrystalline silicon/silicon carbide heterojunctions J. P. HenningK. J. SchoenJ. A. Cooper Jr. Special Issue Paper Pages: 296 - 299
Thickness determination of low doped SiC epi-films on highly doped SiC substrates M. F. MacmillanA. HenryE. Janzén Special Issue Paper Pages: 300 - 303
Surface chemistry of porous silicon carbide W. ShinW. SeoK. Koumoto Special Issue Paper Pages: 304 - 307
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching V. RamachandranM. F. BradyD. W. Greve Special Issue Paper Pages: 308 - 312
Anomalous oxidation rate in 6H-SiC depending on the partial pressure of O2 and H2O Katsunori Ueno Special Issue Paper Pages: 313 - 316
Perimeter governed minority carrier lifetimes in 4H-SiC p+n diodes measured by reverse recovery switching transient analysis Philip G. Neudeck Special Issue Paper Pages: 317 - 323
High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC T. N. OderJ. R. WilliamsJ. Crofton Special Issue Paper Pages: 324 - 329
Improved ohmic contact to n-type 4H and 6H-SiC using nichrome E. D. LuckowskiJ. M. DeluccaJ. Crofton Special Issue Paper Pages: 330 - 334
Study of avalanche breakdown and impact ionization in 4H silicon carbide A. O. KonstantinovQ. WahabU. Lindefelt Special Issue Paper Pages: 335 - 341
MOVPE production reactors for high temperature electronics H. ProtzmannB. WachtendorfH. Juergensen Special Issue Paper Pages: 342 - 345
Nanometer-scale investigation of metal-SiC interfaces using ballistic electron emission microscopy H. J. ImB. KaczerW. J. Choyke Special Issue Paper Pages: 345 - 352
Effect of epilayer characteristics and processing conditions on the thermally oxidized SiO2/SiC interface M. K. DasJ. A. Cooper Jr.M. R. Melloch Special Issue Paper Pages: 353 - 357
Al+ and B+ implantations into 6H-SiC epilayers and application to pn junction diodes T. KimotoO. TakemuraM. Inoue Special Issue Paper Pages: 358 - 364
Performance comparison of wide bandgap semiconductor rf power devices C. E. WeitzelK. E. Moore Special Issue Paper Pages: 365 - 369
Dopant activation and surface morphology of ion implanted 4H- and 6H-silicon carbide M. A. CapanoS. RyuM. R. Buss Special Issue Paper Pages: 370 - 376
Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates H. S. KimD. H. KoM. Y. Lee Letters Pages: L21 - L25
