Processing and properties of CVD diamond for thermal management S. JinH. Mavoori Special Issue Paper Pages: 1148 - 1153
Diffusion and phase transformations during interfacial reaction between lead-tin solders and palladium G. Ghosh Special Issue Paper Pages: 1154 - 1160
Thermodynamic prediction of interface phases at Cu/solder joints Hyuck Mo LeeSeung Wook YoonByeong-Joo Lee Special Issue Paper Pages: 1161 - 1166
Theory for intermetallic phase growth between cu and liquid Sn-Pb solder based on grain boundary diffusion control Matt SchaeferRaymond A. FournelleJin Liang Special Issue Paper Pages: 1167 - 1176
Modeling the solid-state reaction between Sn-Pb solder and a porous substrate coating K. L. EricksonP. L. HopkinsP. T. Vianco Special Issue Paper Pages: 1177 - 1192
Electric current effects upon the Sn/Cu and Sn/Ni interfacial reactions Sinn-Wen ChenChin-Ming ChenWen-Chyuarn Liu Special Issue Paper Pages: 1193 - 1199
Study of interfacial reactions between Tin and copper by differential scanning calorimetry S. K. KangS. Purushothaman Special Issue Paper Pages: 1199 - 1204
Wetting interaction of Pb-free Sn-Zn-Al solders on metal plated substrate Kwang-Lung LinYu-Chien Wang Special Issue Paper Pages: 1205 - 1210
The effect of thin film structure and properties on gold ball bonding J. E. KrzanowskiE. RazonA. F. Hmiel Special Issue Paper Pages: 1211 - 1215
New, creep-resistant, low melting point solders with ultrafine oxide dispersions H. MavooriS. Jin Special Issue Paper Pages: 1216 - 1222
Effects of palladium and solder aging on mechanical and fatigue properties of tin-lead eutectic solder S. VaynmanG. GhoshM. E. Fine Special Issue Paper Pages: 1223 - 1228
Mechanical fatigue characteristics of Sn-3.5Ag-X (X=Bi, Cu, Zn and In) solder alloys Yoshiharu KariyaMasahisa Otsuka Special Issue Paper Pages: 1229 - 1235
Correlation of microstructure with electrical behavior of Ti/GaN schottky contacts M. T. HirschK. J. DuxstadZ. Liliental-Weber Special Issue Paper Pages: 1236 - 1239
Formation of uniform GaAs multi-atomic steps with 20–30 nm periodicity and related structures on vicinal (111)B planes by MBE Y. NakamuraIchiro TanakaH. Sakaki Special Issue Paper Pages: 1240 - 1243
Optimization of the base electrode for InGaAs/InP DHBT structures with a buried emitter-base junction R. F. KopfR. A. HammJ. Burm Special Issue Paper Pages: 1244 - 1247
Removal of threading dislocations from patterned heteroepitaxial semiconductors by glide to sidewalls X. G. ZhangP. LiJ. E. Ayers Special Issue Paper Pages: 1248 - 1253
Bondability analysis of bond pads by thermoelectric temperature measurements A. SchneuwlyP. GröningG. Müller Special Issue Paper Pages: 1254 - 1261
High-quality conformal silicon oxide films prepared by multi-step sputtering PECVD and chemical mechanical polishing Min ParkHyun Kyu YuKee Soo Nam Special Issue Paper Pages: 1262 - 1267
Amorphous chromium silicide formation in hydrogenated amorphous silicon A. KovsarianJ. M. Shannon Special Issue Paper Pages: 1268 - 1271
Electrical characteristics of high performance Au/n-GaN schottky diodes X. J. WangL. He Special Issue Paper Pages: 1272 - 1276
Epitaxial growth of (\(11\bar 20\)) ZnO on (\(01\bar 12\)) Al2O3 by metalorganic chemical vapor deposition2) Al2O3 by metalorganic chemical vapor deposition S. LiangC. R. GorlaY. Lu Letters Pages: L72 - L76
The effects of glass-substrate’s surface-treatment on the characteristics of N-channel polycrystalline silicon thin film transistors Y. Z. WangO. O. Awadelkarim Letters Pages: L77 - L80
