Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates Kun WangDimitris PavlidisJun Cao OriginalPaper 01 January 1997 Pages: 1 - 6
Zn-Doped InGaP Grown by the LP- MOCVD R. KúdelaJ. NovakM. Kucera OriginalPaper 01 January 1997 Pages: 7 - 10
A Mössbauer Study of Tin-Based Intermetallics Formed During the Manufacture of Dispersion-Strengthened Composite Solders Robert C. RenoMichael J. PanuntoBrett H. Piekarski OriginalPaper 01 January 1997 Pages: 11 - 15
Beryllium Ion Implantation into GaAs and Pseudomorphic AIGaAs/lnGaAs/GaAs Heterostructure J. F. ThieryH. FawazG. Salmer OriginalPaper 01 January 1997 Pages: 16 - 20
Optical Properties and Reactive Sputtering Conditions of AIN and AlSiN Thin Films for Magneto- Optical Applications X. S. MiaoY. C. ChanZ. Y. Lee OriginalPaper 01 January 1997 Pages: 21 - 24
Anomalous Lateral Zn Surface Diffusion in InP Caused by Zn-Contained Metallization Moon-Ho PaekP. H. HaoL. C. Wang OriginalPaper 01 January 1997 Pages: 25 - 29
Subnanometer Analysis and Modeling of MBE Grown InP Based MODFETs Matthew SeafordScott MassieLester Eastman OriginalPaper 01 January 1997 Pages: 30 - 33
Effect of SiO2 Powder on Mirror Polishing of InP Wafers Yuji MorisawaIsao KikumaManabu Takeuchi OriginalPaper 01 January 1997 Pages: 34 - 36
Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films H. C. ChuiR. M. BiefeldH. C. Lee OriginalPaper 01 January 1997 Pages: 37 - 42
Effects of Rapid Thermal Annealing on the Device Characteristics of Quantum Well Infrared Photodetectors D.K. SenguptaW FangH.C. Liu OriginalPaper 01 January 1997 Pages: 43 - 51