Electrical properties of Si1−x−yGexCy and Ge1−yCy alloys F. ChenR. T. TrögerJ. Kolodzey Regular Issue Paper Pages: 1371 - 1375
Growth and characterization of n-type InP/InGaAs quantum well infrared photodetectors for response at 8.93 µm D. K. SenguptaS. L JacksonH. C. Liu Regular Issue Paper Pages: 1376 - 1381
Growth and characterization of InGaAs/InP p-quantum-well infrared photodetectors with extremely thin quantum wells D. K. SenguptaS. L. JacksonH. C. Liu Regular Issue Paper Pages: 1382 - 1388
X-ray diffraction and high resolution transmission electron microscopy of 3C-SiC/AlN/6H-SiC(0001) J. H. EdgarZ. J. YuX. Cheng Regular Issue Paper Pages: 1389 - 1393
Preparation of PbTiO3 thin films by plasma enhanced MOCVD and the effect of rapid thermal annealing Yoon-Bong HahnJong-Wha KimIn-Sun Lee Regular Issue Paper Pages: 1394 - 1400
Modeling and algorithm development for automated optical endpointing of an HBT emitter etch C. K. HanishJ. W. GrizzleS. W. Pang Regular Issue Paper Pages: 1401 - 1408
A temperature-dependent model for the complex dielectric function of GaAs Leonard I. KamletFred L. Terry Jr.George N. Maracas Regular Issue Paper Pages: 1409 - 1416
Effects of layer design on the performance of InAs/AlSb/GaSb resonant interband tunneling diodes on GaAs substrates Kumar ShiralagiJun ShenRay Tsui Regular Issue Paper Pages: 1417 - 1421
Enhanced diffusion and improved device performance using dual spectral source rapid thermal processing R. SinghK. C. CherukuriS. Narayanan Regular Issue Paper Pages: 1422 - 1427
Temperature variation of optical energy gap values of the compound CuGaTe2 A. RiveroM. QuinteroJ. Ruiz Regular Issue Paper Pages: 1428 - 1432
Elimination of low frequency gain in InAlAs/InGaAs metal-semiconductor-metal photodetectors by silicon nitride passivation R. G. DecorbyR. I. MacdonaldF. Gouin Letters Pages: L25 - L28
Identification of Cu-related thermally stimulated current trap in undoped semi-insulating GaAs Z. -Q. FangD. C. LookR. L. Jones Letters Pages: L29 - L31
Controlled steam oxidation of AlInAs for microelectronics and optoelectronics applications P. PetitP. LegayM. Quillec Letters Pages: L32 - L35