Advances in physically based erosion simulators for CMP Scott R. Runnels OriginalPaper Pages: 1574 - 1580
Chemical-mechanical polishing of oxide thin films: The rebinder-westwood phenomenon revisited Krishna Rajan OriginalPaper Pages: 1581 - 1584
Nanofabrication of a quantum dot array: Atomic force microscopy of electropolished aluminum R. E. RickerA. E. MillerS. Bandyopadhyay OriginalPaper Pages: 1585 - 1592
Electrochemical effects in the chemical-mechanical polishing of copper for integrated circuits C. A. SainioD. J. DuquetteS. P. Murarka OriginalPaper Pages: 1593 - 1598
Solution chemical constraints in the chemical-mechanical polishing of copper: Aqueous stability diagrams for the Cu-H2O and Cu-NH3-H2O systems K. Osseo-AsakeKamal K. Mishra OriginalPaper Pages: 1599 - 1607
Distribution systems for CMP: The new challenge Robert KormanDennis Capitanio OriginalPaper Pages: 1608 - 1611
The Importance of Particle Size to the Performance of Abrasive Particles in the CMP Process Michael C. PohlDuncan A. Griffiths OriginalPaper Pages: 1612 - 1616
Review of planarization and reliability aspects of future interconnect materials Anantha R. SethuramanJiun-Fang WangLee M. Cook OriginalPaper Pages: 1617 - 1622
Optical interferometry for surface measurements of CMP pads David SteinDale HetheringtonTom Stout OriginalPaper Pages: 1623 - 1627
Investigation of pad deformation and conditioning during the CMP of silicon dioxide films K. AchuthanJ. CurryS. V. Babu OriginalPaper Pages: 1628 - 1632
Correlation of photoluminescence linewidths with carrier concentration in p-Ga0.52In0.48P D. J. ArentM. W. PetersonJ. A. Turner OriginalPaper Pages: 1633 - 1636
High-speed InP/lnGaAs heterojunction bipolar transistor utilizing nonalloyed contacts on n+-InP contacting layers M. T. FresinaD. A. AhmakiG. E. Stillman OriginalPaper Pages: 1637 - 1639
C implantation and surface degradation of InGaP C. B. VartuliC. R. AbernathyA. J. Howard OriginalPaper Pages: 1640 - 1644
Cross-sectional TEM of Pd/InP and Au/lnP interfaces formed at substrate temperatures near 300 and 77K J. W. PalmerW. A. AndersonM. Thomas OriginalPaper Pages: 1645 - 1651
Photoluminescence analysis of InAIAs-InGaAs HFET Material with Varied Placement of Heavy δ-Doping William E. LeitchBernd U. HenleErhard Kohn OriginalPaper Pages: 1652 - 1659