Preparation and gas-sensing properties of α-Fe2O3 thin films C. C. ChaiJ. PengB. P. Yan OriginalPaper Pages: 799 - 804
Process parameter dependence of impurity-free interdiffusion in GaAs/AlxGa1−xAs and InxGa1−yAs/GaAs multiple quantum wells S. BürknerM. MaierJ. D. Ralston OriginalPaper Pages: 805 - 812
Investigations on Au, Ag, and Al schottky diodes on liquid encapsulated czochralski grown n-GaAs〈100〉 S. ArulkumaranJ. ArokiarajP. Ramasamy OriginalPaper Pages: 813 - 817
Microstructures of InAs1−xSbx (x = 0.07–0.14) alloys and strained-layer superlattices D. M. FollstaedtR. M. BiefeldK. C. Baucom OriginalPaper Pages: 819 - 825
Chemical beam epitaxy and laser-modified chemical beam epitaxy of InGaAs using tris-dimethylaminoarsenic H. K. DongN. Y. LiC. W. Tu OriginalPaper Pages: 827 - 832
Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies A. KumarD. PalD. N. Bose OriginalPaper Pages: 833 - 840
Copper-matrix molybdenum particle composites made from copper coated molybdenum powder Pay YihD. D. L. Chung OriginalPaper Pages: 841 - 851
Electrical properties of inhomogeneous SiC MIS structures M. KarlsteenA. BaranzahiI. Lundström OriginalPaper Pages: 853 - 861
Low-temperature processing of shallow junctions using epitaxial and polycrystalline CoSi2 Erin C. JonesNathan W. CheungDavid B. Fraser OriginalPaper Pages: 863 - 873
Low temperature heteroepitaxial growth of Si1−xGexon-Si by photo-enhanced ultra high vacuum chemical vapor deposition using Si2H6 and Ge2H6 C. LiS. JohnS. Banerjee OriginalPaper Pages: 875 - 884
Microstructure and domain configurations in ferroelectric PbTiO3 and Pb(Zr,Ti)O3 thin fims Jane G. ZhuM. M. Al-JassimMaria Huffman OriginalPaper Pages: 885 - 891
Electronic characterization of heterojunctions by surface potential monitoring L. KronikM. LeibovitchYoram Shapira OriginalPaper Pages: 893 - 901
T(x) phase diagram of the Cu2Se-Al2Se3 system B. V. KorzounL. A. MakovetskayaA. P. Chernyakova OriginalPaper Pages: 903 - 906
DX-center energy level dependence on silicon doping concentration in Al0.3Ga0.7As G. Medeiros-RibeiroA. G. de OliveiraD. A. W. Soares OriginalPaper Pages: 907 - 912
LT-GaAs with high breakdown strength at low temperature for power MISFET applications K. -M. LipkaB. SplingartE. Kohn OriginalPaper Pages: 913 - 916