Ordering and disordering of doped Ga0.5In0.5P Sarah R. KurtzJ. M. OlsonS. Asher OriginalPaper Pages: 431 - 435
Epitaxial Ge layers on Si via GexSi1-xO2 reduction: The roles of the hydrogen partial pressure and the Ge content W. S. LiuM. A. NicoletK. L. Wang OriginalPaper Pages: 437 - 440
Pyrolysis of diisopropylantimony hydride: A new precursor for organometallic vapor phase epitaxy C. W. HillM. TaoG. B. Stringfellow OriginalPaper Pages: 447 - 451
Improved efficiency in green polymer light-emitting diodes with air-stable electrodes C. ZhangS. HogerA. J. Heeger OriginalPaper Pages: 453 - 458
Investigation of the 1.20-eV photoluminescence band in rapid thermal annealed InP C. S. MaP. W. ChanS. P. Wong OriginalPaper Pages: 459 - 464
Growth and characterization of a GaAs/AlAs superlattice with variable layer thicknesses H. K. LipsanenV. M. Airaksinen OriginalPaper Pages: 465 - 470
Low temperature fired positive temperature coefficient resistors In-Chyuan HoHuey-Lin Hsieh OriginalPaper Pages: 471 - 476
Microstructural development of eutectic Bi-Sn and eutectic In-Sn during high temperature deformation J. L. Freer GoldsteinJ. W. Morris OriginalPaper Pages: 477 - 486
Electronic passivation of silicon surfaces by halogens Hichem M'saadJurgen MichelL. C. Kimerling OriginalPaper Pages: 487 - 491