1. Electron beam induced current investigations of active electrical defects in silicon due to reactive ion etching and reactive ion beam etching processes

   • G. Jäger-Waldau
   • H. -U. Habermeier
   • E. Bucher

   OriginalPaper Pages: 363 - 367

2. Damage and strain in pseudomorphic vs relaxed Ge_xSi_1−x layers on Si(100) generated by Si ion irradiation

   • D. Y. C. Lie
   • A. Vantomme
   • B. Holländer

   OriginalPaper Pages: 369 - 373

3. Mode I fracture toughness testing of eutectic Sn-Pb solder joints

   • Ronald E. Pratt
   • Eric I. Stromswold
   • David J. Quesnel

   OriginalPaper Pages: 375 - 381

4. Copper chemical vapor deposition from Cu(hexafluoroacetylacetonate)trimethylvinylsilane

   • Jung-Chao Chiou
   • Yin-Jang Chen
   • Mao-Chieh Chen

   OriginalPaper Pages: 383 - 390

5. P-type doping of GaAs by carbon implantation

   • H. Jiang
   • R. G. Elliman
   • J. S. Williams

   OriginalPaper Pages: 391 - 396

6. Pd-Ge contact to n-GaAs with the TiW diffusion barrier

   • Wen Chang Huang
   • Tan Fu Lei
   • Chung Len Lee

   OriginalPaper Pages: 397 - 401

7. Electrical properties of He⁺ ion-implanted GaInP

   • S. -L. Fu
   • T. P. Chin
   • P. M. Asbeck

   OriginalPaper Pages: 403 - 407

8. The effect of surface species on the photoluminescence of porous silicon

   • K. -H. Li
   • C. Tsai
   • J. M. White

   OriginalPaper Pages: 409 - 412

9. Titanium silicide/germanide formation on submicron features for high mobility SiGe channel field effect transistors

   • P. D. Agnello
   • V. P. Kesan
   • J. A. Ott

   OriginalPaper Pages: 413 - 421

10. Origin of optical anisotropy in strained In_xGa_1−xAs/InP and In_yAl_1−yAs/InP heterostructures

    • B. R. Bennett
    • J. A. del Alamo
    • D. E. Aspnes

    OriginalPaper Pages: 423 - 429