Origin of photoluminescence from Er3+ centers in erbium doped GaAs and Al0.4Ga0.6 As grown by MBE Tong ZhangY. HwangP. J. Caldwell OriginalPaper Pages: 1137 - 1140
Surface charge spectroscopy—A novel surface science technique for measuring surface state distributions on semiconductors R. W. M. KwokW. M. LauS. Ingrey OriginalPaper Pages: 1141 - 1146
Characterization of silicon oxide films grown at room temperature by point-to-plane corona discharge M. R. MadaniP. K. Ajmera OriginalPaper Pages: 1147 - 1152
Fe and Ti implants in In0.52Al0.48As Jaime M. MartinRavi K. NadellaC. Caneau OriginalPaper Pages: 1153 - 1157
Influence of the interface-state density on the electron mobility in silicon inversion layers J. BanqueriF. GámizJ. A. López-Villanueva OriginalPaper Pages: 1159 - 1163
Controlled p-type Sb doping in LPE-grown Hg1−x Cdx Te epilayers Theodore C. Harman OriginalPaper Pages: 1165 - 1172
Influence of device structure and growth conditions on the tunneling characteristics of Si/Si1−xGex double barrier structures Ulf GennserV. P. KesanE. S. Yang OriginalPaper Pages: 1173 - 1177