Epitaxial growth and electrical conductance of metal(CoSi2)/insulator(CaF2) nanometer-thick layered structures on Si (111) Masahiro WatanabeShigeki MuratakeShigehisa Arai OriginalPaper Pages: 783 - 789
ArF excimer laser-enhanced photochemical vapor deposition of epitaxial Si from Si2H6: A simple growth kinetic model B. FowlerS. LianS. Banerjee OriginalPaper Pages: 791 - 797
Long wavelength GaAs/Al x Ga1−x As quantum well infrared photodetectors grown using metal organic chemical vapor deposition A. ZussmanB. F. LevineW. S. Hobson OriginalPaper Pages: 799 - 803
Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO2 F. Scott JohnsonDonald S. MilesJ. J. Wortman OriginalPaper Pages: 805 - 810
Investigation on the interface of the polycrystalline silicon contacted diode formed with a stacked amorphous silicon film S. L. WuC. L. LeeL. J. Chen OriginalPaper Pages: 811 - 816
Electrical characteristics of diodes fabricated in selective Si/Si1−x Ge x epitaxial layers T. I. KaminsK. NaukaJ. F. Gibbons OriginalPaper Pages: 817 - 824
The role of complementary species in P/Be and Ar/Be Co-implanted InP Chang Oh JeongSung June KimByung Doo Choe OriginalPaper Pages: 825 - 829
Reactions between Pd thin films and InP Douglas G. IveyPing JianRobert Bruce OriginalPaper Pages: 831 - 839