1. Foreword

   • G. B. Stringfellow

   EditorialNotes Pages: 287 - 287

2. RHEED and XPS observations of trimethylgallium adsorption on GaAs (001) surfaces—Relevance to atomic layer epitaxy

   • B. Y. Maa
   • P. D. Dapkus

   OriginalPaper Pages: 289 - 294

3. In-situ OMVPE process sensing of GaAs and AlGaAs by photoreflectance

   • K. Capuder
   • P. E. Norris
   • F. H. Pollak

   OriginalPaper Pages: 295 - 298

4. Dimethylarsine: Pyrolysis mechanisms and use for OMVPE growth

   • S. H. Li
   • C. A. Larsen
   • D. W. Brown

   OriginalPaper Pages: 299 - 304

5. MOCVD of AlGaAs/GaAs with novel group III compounds

   • V. Frese
   • G. K. Regel
   • K. Werner

   OriginalPaper Pages: 305 - 310

6. OMVPE growth of In_0.53Ga_0.47As on InP using tertiarybutylarsine

   • F. G. Kellert
   • K. T. Chan

   OriginalPaper Pages: 311 - 315

7. Thickness variations during MOVPE growth on patterned substrates

   • L. Buydens
   • P. Demeester
   • P. Van Daele

   OriginalPaper Pages: 317 - 321

8. The growth and characterization of InP-based multiquantum wells and multilayer structures

   • J. Thompson
   • A. J. Moseley
   • N. Maung

   OriginalPaper Pages: 323 - 330

9. Carbon tetrachloride doped Al _x Ga_1−x As grown by metalorganic chemical vapor deposition

   • B. T. Cunningham
   • J. E. Baker
   • G. E. Stillman

   OriginalPaper Pages: 331 - 335

10. Low temperature cleaning of Si by a H₂/AsH₃ plasma prior to heteroepitaxial growth of GaAs by metalorganic chemical vapor deposition (MOCVD)

    • Euijoon Yoon
    • Patrice Parris
    • Rafael Reif

    OriginalPaper Pages: 337 - 343

11. Compositional non-uniformities in selective area growth of GaInAs on InP grown by OMVPE

    • James S. C. Chang
    • Kent W. Carey
    • Lee A. Hodge

    OriginalPaper Pages: 345 - 348

12. Long wavelength GRIN-SCH MQW lasers incorporating graded GaAlInAs confinement layers

    • J. Thompson
    • R. M. Ash
    • D. J. Robbins

    OriginalPaper Pages: 349 - 355

13. Metal organic chemical vapor deposition of superconducting YBa₂Cu₃O_7-x thin films

    • P. A. Zawadzki
    • G. S. Tompa
    • B. Gallois

    OriginalPaper Pages: 357 - 362

14. High temperature MOVPE growth of GaAs/AlGaAs device structures with tertiarybutylarsine

    • J. A. Baumann
    • C. Michel
    • R. Schachter

    OriginalPaper Pages: 363 - 366

15. Ultraviolet light-driven epitaxial growth of gallium arsenide at reduced substrate temperatures

    • D. P. Norton
    • P. K. Ajmera

    OriginalPaper Pages: 367 - 374

16. Defect microstructure in low temperature epitaxial silicon grown by RPCVD

    • T. Hsu
    • L. Breaux
    • A. Tasch

    OriginalPaper Pages: 375 - 384

17. Surface contamination and damage from CF₄ and SF₆ reactive ion etching of silicon oxide on gallium arsenide

    • K. L. Seaward
    • N. J. Moll
    • W. F. Stickle

    OriginalPaper Pages: 385 - 391

18. The preparation of PLZT ceramics from a sol-gel process

    • Bi-Shiou Chiou
    • J. N. Kuo
    • H. T. Dai

    OriginalPaper Pages: 393 - 397