Characterisation of ar ion laser induced cvd silicon films: deposition, crystallographic texture and phosphorous doping S. K. RoyA. S. VengurlekarS. Chandrasekhar OriginalPaper Pages: 211 - 217
Growth and led evaluation ofN-type conductive lec gaas co-doped with in and si Takashi FujiiMasato NakajimaTakeshi Komatsubara OriginalPaper Pages: 219 - 222
Challenges in advanced semiconductor technology in the ulsl era for computer applications Carlton M. OsburnArnold Reisman OriginalPaper Pages: 223 - 243
Lpe highly perfect ingaasp/lnp structure characterization by x-ray double crystal diffractometry C. BocchiC. FerrariF. Taiariol OriginalPaper Pages: 245 - 250
Microstructure and properties of multilayer-derived tungsten silicide Bi-Shiou ChiouH. L. RauJ. G. Duh OriginalPaper Pages: 251 - 255
Rapid thermal alloyed ohmic contact on inp G. BahirJ. L. MerzT. W. Sigmon OriginalPaper Pages: 257 - 262
Complete thermodynamic analysis of static electric fields and excess charge in metals A. G. GuyR. G. Selfridge OriginalPaper Pages: 263 - 269
Deep levels and a possible d-x-like center in molecular beam epitaxial inxal1−xas W-P. HongS. DharA. Chin OriginalPaper Pages: 271 - 274
Effect of si—h and n—h bonds on electrical properties of plasma deposited silicon nitride and oxynitride films Son Van Nguyen OriginalPaper Pages: 275 - 281
Phosphorus-overpressure rapid thermal annealing of indium phosphide Ananth DodabalapurC. W. FarleyB. G. Streetman OriginalPaper Pages: 283 - 288
The influence of supercooling on the liquid phase epitaxial growth of inas1−xsbx on (100) GASB substrates H. ManiA. JoullieJ. Primot OriginalPaper Pages: 289 - 294
The effect of crystal defects on the performance of gaas solar cells C. G. MichelG. J. VenduraH. S. Marek OriginalPaper Pages: 295 - 299
Structural and electrical properties of stable ni/cr thin films C. L. AuM. A. JacksonW. A. Anderson OriginalPaper Pages: 301 - 306