Failure analysis of die-attachment on static random access memory (SRAM) semiconductor devices S. L. TanK. W. ChangKen K. S. Fu OriginalPaper Pages: 7 - 11
Electrical activity, mode of incorporation and distribution coefficient of group V elements in Hg1−xCdxTe grown from tellurium rich liquid phase epitxial growth solutions H. R. VydyanathJ. A. EllsworthC. M. Devaney OriginalPaper Pages: 13 - 25
Al2O3 deposited by the oxidation of trimethylaluminum as gate insulators in hydrogen sensors T. H. HuaM. Armgarth OriginalPaper Pages: 27 - 31
Polymers as masks for Ion implantation N. A. PapanicolaouP. E. ThompsonR. J. Corazzi OriginalPaper Pages: 33 - 38
Adhesion of aluminum films on polyimide by the electromagnetic tensile test Bruno P. BaranskiJoseph H. Nevin OriginalPaper Pages: 39 - 43
The modelling of silicon oxidation from 1 × 10−5 to 20 atmospheres A. ReismanE. H. NicollianC. J. Merz OriginalPaper Pages: 45 - 55
Molecular beam epitaxial growth of InGaAsSb on (100) GaSb with emission wavelength in the 2 to 2.5 μm range T. H. ChiuJ. L. ZyskindW. T. Tsang OriginalPaper Pages: 57 - 61
Reversible electrical properties of LEC GaAs D. C. LookW. M. TheisG. Mathur OriginalPaper Pages: 63 - 67
Growth and characterization of GaAs films deposited on Ge/Si composite substrates by metalorganic chemical vapor deposition R. D. DupuisJ. C. BeanL. C. Hopkins OriginalPaper Pages: 69 - 77
Co-Implantation and autocompensation in close contact rapid thermal annealing of Si-implanted GaAs:Cr C. W. FarleyT. S. KimB. G. Streetman OriginalPaper Pages: 79 - 85
Impurity-induced disordering of AlxGa1−xAs-GaAs quantum well heterostructures with (Si2)x(GaAs)1−x barriers L. J. GuidoN. HolonyakT. L. Paoli OriginalPaper Pages: 87 - 91
Electrical conduction in polyimide between 20 and 350° C F. W. SmithH. J. NeuhausT. J. Lewis OriginalPaper Pages: 93 - 106