Effect of total pressure on the uniformity of epitaxial GaAs films grown in the Ga-HCl-AsH3-H2 system N. PützA. SauerbreyP. Balk OriginalPaper Pages: 645 - 653
Electrical characterization of high purity InGaAsP alloys J. L. BenchimolD. Scalbert}M. Quillec OriginalPaper Pages: 655 - 666
Photoluminescence Studies of CuInS2-CuInSe2 Alloy Crystals P. LangeH. NeffK. J. Bachmann OriginalPaper Pages: 667 - 676
The lattice constants of CuInSe2 M. L. FearheileyK. J. BachmannC. R. Herrington OriginalPaper Pages: 677 - 683
Microwave plasma oxidation of silicon C. Y. FuJ. C. MikkelsenM. J. Thompson OriginalPaper Pages: 685 - 706
Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range J. C. DeWinterM. A PollackJ. L. Zyskind OriginalPaper Pages: 729 - 747
Sulfur incorporation during epitaxial growth of inp in the IN-HC1-PH3-H2 system D. GrundmannH. JürgensenP. Balk OriginalPaper Pages: 749 - 767
Properties of gaas:si epitaxial layers grown in a multiwafer MOCVD reactor H. KanberT. ZielinskiJ. M. Whelan OriginalPaper Pages: 769 - 781