The structural dependence of light sensitivity in (Al,Ga)As/GaAs modulation doped heterostructures J. KlemT. J. DrummondM. Nathan OriginalPaper Pages: 741 - 748
The compositional grading of MOCVD-grown GaAs1−xPx via substrate temperature changes C. R. LewisM. J. Ludowise OriginalPaper Pages: 749 - 761
Increased oxygen precipitation in CZ silicon wafers covered by polysilicon M. C. ArstJ. G. de Groot OriginalPaper Pages: 763 - 778
Growth and characterization of Ga1−xInxAs by low pressure metalorganic chemical vapor deposition K. L. HessD. L. KasemsetP. D. Dapkus OriginalPaper Pages: 779 - 798
Kinetics of GaAs growth by low pressure MO-CVD H. HeineckeE. VeuhoffP. Balk OriginalPaper Pages: 815 - 830
Electronic structural study of liquid phase epitaxy grown AlxGa1−xAs:Be using temperature dependent (≥ 10 K) laser excited photoluminescence S. T. EdwardsA. F. SchreinerS. Bedair OriginalPaper Pages: 831 - 842