1. Endurance and retention of mnos devices over the temperature range from −50°c to +125°c

   • R. V. Jones
   • W. D. Brown

   OriginalPaper Pages: 959 - 972

2. Study of cr, si and mn distribution in semi-insulating gaas after annealing with and without SiO₂ in an H₂-AS₄ atmosphere

   • M. Feng
   • V. Eu
   • W. B. Henderson

   OriginalPaper Pages: 973 - 986

3. Growth and impurity characterisation ofblue crystals of cuals₂

   • E. Guerrero
   • V. Sagredo
   • J. S. Shah

   OriginalPaper Pages: 987 - 998

4. Hydrogen insertion compounds of transition metal oxides

   • P. G. Dickens
   • S. J. Hibble
   • R. H. Jarman

   OriginalPaper Pages: 999 - 1009

5. Dependence of electrical properties of polycrystalline cvd si films on grain size and impurity doping concentration^a,b

   • Jane J. Yang
   • William I. Simpson
   • Ralph P. Ruth

   OriginalPaper Pages: 1011 - 1050

6. The growth and characterization of uniform Ga_1-xIn_xAs (X ≤.25) by Organometallic VPE

   • M. J. Ludowise
   • C. B. Cooper
   • R. R. Saxena

   OriginalPaper Pages: 1051 - 1068

7. Slider LPE of Hg_1-xCd_xTe using mercury pressure controlled growth solutions

   • T. C. Harman

   OriginalPaper Pages: 1069 - 1084

8. Si-defect concentrations in heavily Si-DOPED GaAs: annealing-Induced changes-II

   • R. T. Chen
   • W. G. Spitzer

   OriginalPaper Pages: 1085 - 1129

9. The pseudobinary HgTe-CdTe phase diagram

   • F. R. Szofran
   • S. L. Lehoczky

   OriginalPaper Pages: 1131 - 1150

10. Errata

    • M G Astles
    • M L Young

    Erratum Pages: 1151 - 1151