1. Gamma-induced trapping levels in si with and without gold doping

   • C. E. Barnes

   OriginalPaper Pages: 437 - 457

2. High temperature annealing of mnos devices and its effect on si-nitride stress, interface charge density and memory properties

   • R. Hezel

   OriginalPaper Pages: 459 - 484

3. Photoluminescence characterization of solution and lec grown InP

   • D. Barthruff
   • K. W. Benz
   • G. A. Antypas

   OriginalPaper Pages: 485 - 491

4. Surface effects in sem measurements of hole diffusion length in n-GaAs

   • D. L. Partin
   • A. G. Milnes
   • L. F. Vassamillet

   OriginalPaper Pages: 493 - 499

5. Photoionization cross-sections and energy levels of gold, iron, platinum, silver, and titanium in silicon

   • M. Okuyama
   • N. Matsunaga
   • A. G. Milnes

   OriginalPaper Pages: 501 - 515

6. Synthesis and crystal growth of CdGeP₂

   • Paul Vohl

   OriginalPaper Pages: 517 - 528

7. Acoustic emission study of defects in gallium phosphide light emitting diodes

   • T. Ikoma
   • M. Ogura
   • Y. Adachi

   OriginalPaper Pages: 529 - 543

8. Liquid phase epitaxial growth of InAs_1-xSb_x on GaSb

   • E. R. Gertner
   • A. M. Andrews
   • R. A. Riedel

   OriginalPaper Pages: 545 - 554