1. Foreword

   • S. Sivananthan
   • N. K. Dhar

   Special Issue Paper Pages: 587 - 587

2. Impact of critical processes on HgCdTe diode performance and yield

   • Heinrich Figgemeier
   • Martin Bruder
   • Johann Ziegler

   Special Issue Paper Pages: 588 - 591

3. Recent developments of high-complexity HgCdTe focal plane arrays at leti infrared laboratory

   • G. Destéfanis
   • A. Astier
   • J. P. Zanatta

   Special Issue Paper Pages: 592 - 601

4. HgCdTe molecular beam epitaxy material for microcavity light emitters: Application to gas detection in the 2–6 µm range

   • J. P. Zanatta
   • F. Noël
   • E. Hadji

   Special Issue Paper Pages: 602 - 607

5. Far-infrared detector based on HgTe/HgCdTe superlattices

   • Y. D. Zhou
   • C. R. Becker
   • S. Sivananthan

   Special Issue Paper Pages: 608 - 614

6. HgCdTe long-wavelength infrared photovoltaic detectors fabricated using plasma-induced junction formation technology

   • T. Nguyen
   • C. A. Musca
   • L. Faraone

   Special Issue Paper Pages: 615 - 621

7. Planar p-on-n HgCdTe heterojunction mid-wavelength infrared photodiodes formed using plasma-induced junction isolation

   • C. A. Musca
   • J. Antoszewski
   • S. Terterian

   Special Issue Paper Pages: 622 - 626

8. Small two-dimensional arrays of mid-wavelength infrared HgCdTe diodes fabricated by reactive ion etching-induced p-to-n-type conversion

   • J. Antoszewski
   • C. A. Musca
   • L. Faraone

   Special Issue Paper Pages: 627 - 632

9. 1/f noise in large-area Hg_1−xCd_xTe photodiodes

   • A. I. D’Souza
   • M. G. Stapelbroek
   • J. C. Ehlert

   Special Issue Paper Pages: 633 - 638

10. Minority carrier lifetime and noise in abrupt molecular-beam epitaxy-grown HgCdTe heterostructures

    • R. Sewell
    • C. A. Musca
    • A. Rogalski

    Special Issue Paper Pages: 639 - 645

11. Optical absorption properties of HgCdTe epilayers with uniform composition

    • K. Moazzami
    • D. Liao
    • D. D. Edwall

    Special Issue Paper Pages: 646 - 650

12. Midwave-infrared negative luminescence properties of HgCdTe devices on silicon substrates

    • W. W. Bewley
    • J. R. Lindle
    • S. M. Johnson

    Special Issue Paper Pages: 651 - 655

13. Metal-organic vapor-phase epitaxial growth of HgCdTe device heterostructures on three-inch-diameter substrates

    • C. D. Maxey
    • J. P. Camplin
    • N. T. Gordon

    Special Issue Paper Pages: 656 - 660

14. Performance of molecular-beam epitaxy-grown midwave infrared HgCdTe detectors on four-inch Si substrates and the impact of defects

    • J. B. Varesi
    • A. A. Buell
    • S. M. Johnson

    Special Issue Paper Pages: 661 - 666

15. Novel Hg_xCd_1−xTe device structure for higher operating temperature detectors

    • M. K. Ashby
    • N. T. Gordon
    • R. Catchpole

    Special Issue Paper Pages: 667 - 671

16. Stacked multijunction photodetectors of long-wavelength radiation

    • J. Piotrowski
    • P. Brzozowski
    • K. Jóźwikowski

    Special Issue Paper Pages: 672 - 676

17. Low-energy electron-enhanced etching of HgCdTe

    • Jaehwa Kim
    • T. S. Koga
    • Scott M. Johnson

    Special Issue Paper Pages: 677 - 685

18. Lithography factors that determine the aspect ratio of electron cyclotron resonance plasma etched HgCdTe trenches

    • J. D. Benson
    • A. J. Stoltz
    • J. H. Dinan

    Special Issue Paper Pages: 686 - 691

19. The effect of electron cyclotron resonance plasma parameters on the aspect ratio of trenches in HgCdTe

    • A. J. Stoltz
    • J. D. Benson
    • J. H. Dinan

    Special Issue Paper Pages: 692 - 697

20. Time relaxation of point defects in p- and n-(HgCd)Te after ion milling

    • E. Belas
    • V. V. Bogoboyashchyy
    • V. A. Yudenkov

    Special Issue Paper Pages: 698 - 702

21. Electron microscopy of surface-crater defects on HgCdTe/CdZnTe(211)B epilayers grown by molecular-beam epitaxy

    • T. Aoki
    • Y. Chang
    • David J. Smith

    Special Issue Paper Pages: 703 - 709

22. Threading and misfit-dislocation motion in molecular-beam epitaxy-grown HgCdTe epilayers

    • M. Carmody
    • D. Lee
    • J. Arias

    Special Issue Paper Pages: 710 - 716

23. Nucleation of ZnTe/CdTe epitaxy on high-miller-index Si surfaces

    • G. Brill
    • Y. Chen
    • R. Singh

    Special Issue Paper Pages: 717 - 722

24. Molecular-beam epitaxial growth of CdSe_xTe_1−x on Si(211)

    • Y. P. Chen
    • G. Brill
    • N. K. Dhar

    Special Issue Paper Pages: 723 - 727

25. Metal-organic vapor-phase epitaxy growth and characterization of thick (100) CdTe layers on (100) GaAs and (100) GaAs/Si substrates

    • M. Niraula
    • K. Yasuda
    • Y. Agata

    Special Issue Paper Pages: 728 - 732

26. Optical properties of CdSe quantum dots grown on ZnSe and ZnBeSe by molecular beam epitaxy

    • X. Zhou
    • M. C. Tamargo
    • Y. C. Chen

    Special Issue Paper Pages: 733 - 736

27. Luminescence study of ZnTe:Cr epilayers grown by molecular-beam epitaxy

    • Ming Luo
    • B. L. Vanmil
    • N. C. Giles

    Special Issue Paper Pages: 737 - 741

28. The indices of refraction of molecular-beam epitaxy-grown Be_xZn_1−xTe ternary alloys

    • F. C. Peiris
    • M. R. Buckley
    • M. C. Tamargo

    Special Issue Paper Pages: 742 - 746

29. Photoluminescence of CdTe crystals grown by physical-vapor transport

    • W. Palosz
    • K. Grasza
    • A. Burger

    Special Issue Paper Pages: 747 - 751

30. Electrical properties of CdTe near the melting point

    • E. Belas
    • R. Grill
    • P. Höschl

    Special Issue Paper Pages: 752 - 755

31. Characterization of large single-crystal gamma-ray detectors of cadmium zinc telluride

    • A. Burger
    • M. Groza
    • R. B. James

    Special Issue Paper Pages: 756 - 760

32. Development of inclusion-free CdZnTe substrates from crystals grown by the vertical-gradient freeze method

    • J. Franc
    • P. Moravec
    • Z. Šourek

    Special Issue Paper Pages: 761 - 765

33. Thermal diffusion of lithium acceptors into ZnO crystals

    • N. Y. Garces
    • Lijun Wang
    • D. C. Reynolds

    Special Issue Paper Pages: 766 - 771

34. Defect structure of Sn-doped CdTe

    • J. Franc
    • M. Fiederle
    • R. James

    Special Issue Paper Pages: 772 - 777

35. Effects of excess tellurium on the properties of CdZnTe radiation detectors

    • Muren Chu
    • Sevag Terterian
    • Arnold Burger

    Special Issue Paper Pages: 778 - 782

36. Optical properties of CdS_0.2Se_0.8:V

    • Jonathan T. Goldstein
    • Melvin Ohmer
    • Ying-Fang Chen

    Special Issue Paper Pages: 783 - 788

37. Internal electric field measurements in cadmium zinc telluride using transmission two-modulator generalized ellipsometry

    • G. E. Jellison Jr.
    • D. E. Holcomb
    • F. Lu

    Special Issue Paper Pages: 789 - 795

38. Uniformity and reproducibility studies of low-pressure-grown Cd_0.90Zn_0.10Te crystalline materials for radiation detectors

    • S. Terterian
    • M. Chu
    • P. N. Luke

    Special Issue Paper Pages: 796 - 802

39. Mid-wavelength infrared p-on-n Hg_1−xCd_xTe heterostructure detectors: 30–120 kelvin state-of-the-Art performance

    • Majid Zandian
    • J. D. Garnett
    • Donald N. B. Hall

    Special Issue Paper Pages: 803 - 809

40. Low-temperature annealing of (Hg,Cd)Te

    • D. Chandra
    • H. F. Schaake
    • M. A. Kinch

    Special Issue Paper Pages: 810 - 815

41. Inductively coupled plasma etching of HgCdTe

    • E. P. G. Smith
    • J. K. Gleason
    • M. S. Welkowsky

    Special Issue Paper Pages: 816 - 820

42. Scalability of dry-etch processing for small unit-cell HgCdTe focal-plane arrays

    • E. P. G. Smith
    • G. M. Venzor
    • J. H. Dinan

    Special Issue Paper Pages: 821 - 826