1. Studies of liquid-phase deposition-oxide/InP structure by liquid-phase deposition

   • C. J. Huang

   Regular Issue Paper Pages: 1309 - 1315

2. The H₂ plasma treatment of silver contacts: Impact on wire-bonding performance

   • M. Bielmann
   • P. Ruffieux
   • P. Gröning

   Regular Issue Paper Pages: 1316 - 1320

3. Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

   • M. Wolter
   • P. Javorka
   • M. Heuken

   Regular Issue Paper Pages: 1321 - 1324

4. Photonic effects during low-temperature ultraviolet-assisted oxidation of SiGe

   • V. Craciun
   • R. K. Singh
   • Ian W. Boyd

   Regular Issue Paper Pages: 1325 - 1329

5. Schottky enhancement of contacts to n-(In_0.52Al_0.48)As using PdAl as a metallization

   • D. Ingerly
   • C. -F. Lin
   • Y. A. Chang

   Regular Issue Paper Pages: 1330 - 1336

6. Vapor pressures of the adducts formed during AlGaN organometallic vapor-phase epitaxy

   • J. Randall Creighton

   Regular Issue Paper Pages: 1337 - 1340

7. Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

   • Shyh-Fann Ting
   • Yean-Kuen Fang
   • Jyh-Jier Ho

   Regular Issue Paper Pages: 1341 - 1346

8. Analyses of the practical adhesion strengths of the metal/polymer interfaces in electronic packaging

   • Jin Yu
   • J. Y. Song
   • I. S. Park

   Regular Issue Paper Pages: 1347 - 1352

9. Schottky barrier height studies of Au/4H-SiC(0001) using photoemission and synchrotron radiation

   • C. Virojanadara
   • P. -A. Glans
   • L. D. Madsen

   Regular Issue Paper Pages: 1353 - 1356

10. Anisotropic and selective grain growth during ohmic contact formation

    • Qianghua Xie
    • Peter Fejes
    • Ellen Lan

    Regular Issue Paper Pages: 1357 - 1361

11. The Cu/n-GaAs schottky barrier diodes prepared by anodization process

    • Mehmet Biber
    • Abdulmecit Türüt

    Regular Issue Paper Pages: 1362 - 1368