1. Forewood

   • Siva Sivananthan
   • Herb Schaake

   EditorialNotes Pages: 559 - 559

2. LPE HgCdTe on sapphire status and advancements

   • G. Bostrup
   • K. L. Hess
   • R. Haines

   Special Issue Paper Pages: 560 - 565

3. Fabrication of high-performance large-format MWIR focal plane arrays from MBE-grown HgCdTe on 4″ silicon substrates

   • J. B. Varesi
   • R. E. Bornfreund
   • J. E. Jensen

   Special Issue Paper Pages: 566 - 573

4. MCT technology challenges for mass production

   • Philippe Tribolet
   • Jean-Pierre Chatard
   • Sylvain Paltrier

   Special Issue Paper Pages: 574 - 584

5. Current mechanisms in VLWIR Hg_1−xCd_xTe photodiodes

   • A. I. D'Souza
   • R. E. Dewames
   • J. M. Arias

   Special Issue Paper Pages: 585 - 589

6. A novel simultaneous unipolar multispectral integrated technology approach for HgCdTe IR detectors and focal plane arrays

   • W. E. Tennant
   • M. Thomas
   • J. H. Dinan

   Special Issue Paper Pages: 590 - 594

7. Galvanomagnetic properties of CdTe below and above the melting point

   • J. Franc
   • P. Höschl
   • P. Moravec

   Special Issue Paper Pages: 595 - 602

8. Photoluminescence measurements on undoped CdZnTe grown by the high-pressure bridgman method

   • K. Suzuki
   • S. Seto
   • K. Inabe

   Special Issue Paper Pages: 603 - 607

9. Improved morphology and crystalline quality of MBE CdZnTe/Si

   • L. A. Almeida
   • S. Hirsch
   • J. H. Dinan

   Special Issue Paper Pages: 608 - 610

10. Infrared absorption behavior in CdZnTe substrates

    • S. Sen
    • D. R. Rhiger
    • M. C. Currie

    Special Issue Paper Pages: 611 - 618

11. MBE growth of HgCdTe on silicon substrates for large format MWIR focal plane arrays

    • K. D. Maranowski
    • J. M. Peterson
    • J. E. Jensen

    Special Issue Paper Pages: 619 - 622

12. TEM investigation of defects in arsenic doped layers grown in-situ by MBE

    • Majid Zandian
    • Edward Goo

    Special Issue Paper Pages: 623 - 626

13. MBE growth of HgCdTe epilayers with reduced visible defect densities: Kinetics considerations and substrate limitations

    • E. C. Piquette
    • M. Zandian
    • J. M. Arias

    Special Issue Paper Pages: 627 - 631

14. Characterization of cross-hatch morphology of MBE (211) HgCdTe

    • M. Martinka
    • L. A. Almeida
    • J. H. Dinan

    Special Issue Paper Pages: 632 - 636

15. Improvement of the accuracy of the In-situ ellipsometric measurements of temperature and alloy composition for MBE grown HgCdTe LWIR/MWIR structures

    • M. Daraselia
    • J. W. Garland
    • S. Sivananthan

    Special Issue Paper Pages: 637 - 642

16. Composition control of long wavelength MBE HgCdTe using In-situ spectroscopic ellipsometry

    • Dennis Edwall
    • Jamie Phillips
    • Jose Arias

    Special Issue Paper Pages: 643 - 646

17. ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application

    • S. K. Hong
    • Y. Chen
    • T. Yao

    Special Issue Paper Pages: 647 - 658

18. ZnO growth toward optical devices by MOVPE using N₂O

    • K. Ogata
    • K. Maejima
    • Sg. Fujita

    Special Issue Paper Pages: 659 - 661

19. Zn(MgBe)Se ultraviolet photodetectors

    • F. Vigué
    • J. -P. Faurie

    Special Issue Paper Pages: 662 - 666

20. A novel approach for the complete removal of threading dislocations from ZnSe on GaAs (001)

    • X. G. Zhang
    • I. A. Rodriguez
    • J. E. Ayersi

    Special Issue Paper Pages: 667 - 672

21. MBE-Grown ZnMgS ultra-violet photodetectors

    • I. K. Sou
    • Marcus C. W. Wu
    • G. K. L. Wong

    Special Issue Paper Pages: 673 - 676

22. Optical properties of molecular beam epitaxy-grown ZnSe_xTe_1−x II–VI semiconductor alloys

    • F. C. Peiris
    • U. Bindley
    • J. K. Furdyna

    Special Issue Paper Pages: 677 - 681

23. Summary of HgCdTe 2D array technology in the U.K.

    • I. M. Baker
    • C. D. Maxey

    Special Issue Paper Pages: 682 - 689

24. Estimation of the p-n junction depth in LWIR HgCdTe detectors from the spatial profile of the lateral photocurrent and transverse photovoltage induced by an infrared small spot

    • V. Garber
    • A. Dust
    • G. Bahir

    Special Issue Paper Pages: 690 - 695

25. Diffusion length measurements in p-HgCdTe using laser beam induced current

    • D. A. Redfern
    • J. A. Thomas
    • L. Faraone

    Special Issue Paper Pages: 696 - 703

26. Characterization of a new planar process for implementation of p-on-n HgCdTe heterostructure infrared photodiodes

    • G. Bahir
    • V. Garber
    • A. Dust

    Special Issue Paper Pages: 704 - 710

27. HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation

    • S. Velicu
    • G. Badano
    • R. Ashokan

    Special Issue Paper Pages: 711 - 716

28. MBE growth and device processing of MWIR HgCdTe on large area Si substrates

    • G. Brill
    • S. Velicu
    • S. Sivananthan

    Special Issue Paper Pages: 717 - 722

29. Growth of long wavelength infrared MCT emitters on conductive substrates

    • C. D. Maxey
    • M. U. Ahmed
    • T. Ashley

    Special Issue Paper Pages: 723 - 727

30. Transition metal doped cadmium manganese telluride: A new material for tunable mid-infrared lasing

    • S. B. Trivedi
    • S. W. Kutcher
    • Gary Green

    Special Issue Paper Pages: 728 - 732

31. Antireflective structures in CdTe and CdZnTe surfaces by ECR plasma etching

    • A. J. Stoltz
    • M. R. Banish
    • P. R. Boyd

    Special Issue Paper Pages: 733 - 737

32. Near-IR comparative characterization of optical second-order nonlinearities in Te-based semiconductors

    • A. Zappettini
    • S. M. Pietralunga
    • M. Martinelli

    Special Issue Paper Pages: 738 - 742

33. High-pressure bridgman grown CdZnTe for electro-optic applications

    • A. Zappettini
    • L. Cerati
    • M. Martinelli

    Special Issue Paper Pages: 743 - 747

34. Self-ordered CdSe quantum dots in ZnSe and (Zn, Mn)Se Matrices Assessed by transmission electron microscopy and photoluminescence spectroscopy

    • P. Möck
    • T. Topuria
    • J. K. Furdyna

    Special Issue Paper Pages: 748 - 755

35. Substrate quality impact on the carrier concentration of undoped annealed HgCdTe LPE layers

    • Eliezer Weiss
    • Olga Klin
    • Yehuda Juravel

    Special Issue Paper Pages: 756 - 761

36. p-to-n type-conversion mechanisms for HgCdTe exposed to H₂/CH₄ plasmas

    • J. White
    • R. Pal
    • P. Burke

    Special Issue Paper Pages: 762 - 767

37. Contactless junction contrast of HgCdTe n-on-p-type structures obtained by reactive ion etching induced p-to-n conversion

    • E. A. Gluszak
    • S. Hinckley

    Special Issue Paper Pages: 768 - 773

38. DC photoconductivity study of semi-insulating Cd_1−xZn_xTe crystals

    • Y. Cui
    • G. W. Wright
    • A. Burger

    Special Issue Paper Pages: 774 - 778

39. HgCdTe growth on (552) oriented CdZnTe by metalorganic vapor phase epitaxy

    • P. Mitra
    • F. C. Case
    • P. W. Norton

    Special Issue Paper Pages: 779 - 784

40. The effect of high energy electrons during the growth of ZnSe and ZnMgSe by molecular beam epitaxy

    • B. L. Vanmil
    • A. J. Ptak
    • R. D. Smith

    Special Issue Paper Pages: 785 - 788

41. On the kinetics of the activation of arsenic as a p-type dopant in Hg_1−xCd_xTe

    • H. F. Schaake

    Special Issue Paper Pages: 789 - 793

42. Defect reduction in Hg_1−xCd_xTe grown by molecular beam epitaxy on Cd_0.96Zn_0.04Te(211)B

    • F. Aqariden
    • H. D. Shih
    • P. K. Liao

    Special Issue Paper Pages: 794 - 796

43. Fabrication of 0.95Sn−0.05Au solder micro-bumps for flip-chip bonding

    • Takao Ishii
    • Shinji Aoyama
    • Masami Tokumitsu

    Letter Pages: L25 - L27