Piezoelectric polarization in the radiative centers of GaInN/GaN quantum wells and devices C. WetzelT. DetchprohmI. Akasaki Special Issue Paper Pages: 252 - 255
The properties of annealed AlN films deposited by pulsed laser deposition K. A. JonesM. A. DerengeT. Venkatesan Special Issue Paper Pages: 262 - 267
Influence of crystalline defects on transport properties of GaN grown by ammonia-molecular beam epitaxy and magnetron sputter epitaxy H. TangJ. WebbS. Raymond Special Issue Paper Pages: 268 - 273
Local electronic properties of AlGaN/GaN heterostructures probed by scanning capacitance microscopy K. V. SmithE. T. YuK. S. Boutros Special Issue Paper Pages: 274 - 280
Dielectric and lattice-dynamical properties of III-nitrides Ulrike GrossnerJ. FurthmüllerF. Bechstedt Special Issue Paper Pages: 281 - 284
Dry etch selectivity of Gd2O3 to GaN and AlN D. C. HaysK. P. LeeS. J. Pearton Special Issue Paper Pages: 285 - 290
Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN D. L. HibbardR. W. ChuangM. Bremser Special Issue Paper Pages: 291 - 296
Investigation of flicker noise and deep-levels in GaN/AlGaN transistors A. BalandinK. L. WangM. Wojtowicz Special Issue Paper Pages: 297 - 301
Nitride-based laser diodes using thick n-AlGaN layers T. TakeuchiT. DetchprohmN. Yamada Special Issue Paper Pages: 302 - 305
Pendeo-epitaxial growth of gallium nitride on silicon substrates Thomas GehrkeKevin J. LinthicumRobert F. Davis Special Issue Paper Pages: 306 - 310
Low energy electron excited nanoscale luminescence spectroscopy of erbium doped AIN A. P. YoungS. H. GossC. R. Abernathy Special Issue Paper Pages: 311 - 316
MOCVD growth of cubic GaN on 3C-SiC deposited on Si (100) substrates C. H. WeiZ. Y. XieJ. H. Edgar Special Issue Paper Pages: 317 - 321
Selective area growth of GaN using gas source molecular beam epitaxy V. K. GuptaK. L. AverettG. W. Wicks Special Issue Paper Pages: 322 - 324
Surface recombination and sulfide passivation of GaN G. L. MartinezM. R. CurielR. J. Molnar Special Issue Paper Pages: 325 - 331
Band-tail model and temperature-induced blue-shift in photoluminescence spectra of InxGa1-xN grown on sapphire Petr G. EliseevMarek OsinskiShiro Sakai Special Issue Paper Pages: 332 - 341
Effect of UV light irradiation on SiC dry etch rates P. LeerungnawaratH. ChoM. Ostling Special Issue Paper Pages: 342 - 346
Formation of thermal decomposition cavities in physical vapor transport of silicon carbide Edward K. SanchezThomas KuhrMarek Skowronski Special Issue Paper Pages: 347 - 352
Oxygen stability, diffusion, and precipitation in SiC: Implications for thin-film oxidation Massimiliano di VentraSokrates T. Pantelides Special Issue Paper Pages: 353 - 358
SiC/Si(111) film quality as a function of GeH4 flow in an MOCVD reactor Wendy L. SarneyL. Salamanca-RibaK. A. Jones Special Issue Paper Pages: 359 - 363
TEM investigation of silicon carbide wafers with reduced micropipe density S. E. SaddowT. E. SchattnerV. A. Dmitriev Special Issue Paper Pages: 364 - 367
HF chemical etching of SiO2 on 4H and 6H SiC M. B. JohnsonM. E. ZvanutOtha Richardson Special Issue Paper Pages: 368 - 371
CVD-based tungsten carbide schottky contacts to 6H-SiC for very high-temperature operation Nils LundbergMikael ÖstlingUlf Jansson Special Issue Paper Pages: 372 - 375
Electrical characteristics of schottky barriers on 4H-SiC: The effects of barrier height nonuniformity B. J. SkrommeE. LuckowskiD. Ganser Special Issue Paper Pages: 376 - 383
Susceptor effects on the morphological and impurity properties of 4H-SiC epilayers Barbara E. Landini Special Issue Paper Pages: 384 - 390
Effect of Si or Al interface layers on the properties of Ta and Mo contacts to p-type SiC J. O. OlowolafeJ. LiuR. B. Gregory Special Issue Paper Pages: 391 - 397
