1. Effect of In Situ Thermal Cycle Annealing on GaN Film Properties Grown on (001) and (111) GaAs, and Sapphire Substrates

   • Kun Wang
   • Dimitris Pavlidis
   • Jun Cao

   OriginalPaper 01 January 1997 Pages: 1 - 6

2. Zn-Doped InGaP Grown by the LP- MOCVD

   • R. Kúdela
   • J. Novak
   • M. Kucera

   OriginalPaper 01 January 1997 Pages: 7 - 10

3. A Mössbauer Study of Tin-Based Intermetallics Formed During the Manufacture of Dispersion-Strengthened Composite Solders

   • Robert C. Reno
   • Michael J. Panunto
   • Brett H. Piekarski

   OriginalPaper 01 January 1997 Pages: 11 - 15

4. Beryllium Ion Implantation into GaAs and Pseudomorphic AIGaAs/lnGaAs/GaAs Heterostructure

   • J. F. Thiery
   • H. Fawaz
   • G. Salmer

   OriginalPaper 01 January 1997 Pages: 16 - 20

5. Optical Properties and Reactive Sputtering Conditions of AIN and AlSiN Thin Films for Magneto- Optical Applications

   • X. S. Miao
   • Y. C. Chan
   • Z. Y. Lee

   OriginalPaper 01 January 1997 Pages: 21 - 24

6. Anomalous Lateral Zn Surface Diffusion in InP Caused by Zn-Contained Metallization

   • Moon-Ho Paek
   • P. H. Hao
   • L. C. Wang

   OriginalPaper 01 January 1997 Pages: 25 - 29

7. Subnanometer Analysis and Modeling of MBE Grown InP Based MODFETs

   • Matthew Seaford
   • Scott Massie
   • Lester Eastman

   OriginalPaper 01 January 1997 Pages: 30 - 33

8. Effect of SiO₂ Powder on Mirror Polishing of InP Wafers

   • Yuji Morisawa
   • Isao Kikuma
   • Manabu Takeuchi

   OriginalPaper 01 January 1997 Pages: 34 - 36

9. Tertiarybutylarsine for Metalorganic Chemical Vapor Deposition Growth of High Purity, High Uniformity Films

   • H. C. Chui
   • R. M. Biefeld
   • H. C. Lee

   OriginalPaper 01 January 1997 Pages: 37 - 42

10. Effects of Rapid Thermal Annealing on the Device Characteristics of Quantum Well Infrared Photodetectors

    • D.K. Sengupta
    • W Fang
    • H.C. Liu

    OriginalPaper 01 January 1997 Pages: 43 - 51

11. Abstracts

    Abstract 01 January 1997 Pages: 52 - 113