1. Ordering and disordering of doped Ga_0.5In_0.5P

   • Sarah R. Kurtz
   • J. M. Olson
   • S. Asher

   OriginalPaper Pages: 431 - 435

2. Epitaxial Ge layers on Si via Ge_xSi_1-xO₂ reduction: The roles of the hydrogen partial pressure and the Ge content

   • W. S. Liu
   • M. A. Nicolet
   • K. L. Wang

   OriginalPaper Pages: 437 - 440

3. Au/Ge/Ni ohmic contacts to n-Type InP

   • D. G. Ivey
   • D. Wang
   • G. Knight

   OriginalPaper Pages: 441 - 446

4. Pyrolysis of diisopropylantimony hydride: A new precursor for organometallic vapor phase epitaxy

   • C. W. Hill
   • M. Tao
   • G. B. Stringfellow

   OriginalPaper Pages: 447 - 451

5. Improved efficiency in green polymer light-emitting diodes with air-stable electrodes

   • C. Zhang
   • S. Hoger
   • A. J. Heeger

   OriginalPaper Pages: 453 - 458

6. Investigation of the 1.20-eV photoluminescence band in rapid thermal annealed InP

   • C. S. Ma
   • P. W. Chan
   • S. P. Wong

   OriginalPaper Pages: 459 - 464

7. Growth and characterization of a GaAs/AlAs superlattice with variable layer thicknesses

   • H. K. Lipsanen
   • V. M. Airaksinen

   OriginalPaper Pages: 465 - 470

8. Low temperature fired positive temperature coefficient resistors

   • In-Chyuan Ho
   • Huey-Lin Hsieh

   OriginalPaper Pages: 471 - 476

9. Microstructural development of eutectic Bi-Sn and eutectic In-Sn during high temperature deformation

   • J. L. Freer Goldstein
   • J. W. Morris

   OriginalPaper Pages: 477 - 486

10. Electronic passivation of silicon surfaces by halogens

    • Hichem M'saad
    • Jurgen Michel
    • L. C. Kimerling

    OriginalPaper Pages: 487 - 491