1. The influence of indium tin oxide deposition on the transport properties at InP junctions

   • J. K. Luo
   • H. Thomas

   Regular Issue Paper Pages: 1311 - 1316

2. Hall and drift mobilities in molecular beam epitaxial grown GaAs

   • V. W. L. Chin
   • T. Osotchan
   • Z. Kachwalla

   Regular Issue Paper Pages: 1317 - 1321

3. Low frequency electromigration noise and film microstructure in Al/Si stripes: Electrical measurements and TEM analysis

   • C. Ciofi
   • A. Diligenti
   • B. Neri

   Regular Issue Paper Pages: 1323 - 1326

4. Processing-texture relationships in dual-unbalanced magnetron deposition of TiN films

   • S. L. Rohde
   • Y. K. Kim
   • R. J. De Angelis

   Regular Issue Paper Pages: 1327 - 1330

5. Microstructural examination of extended crystal defects in silicon selective epitaxial growth

   • H. Yen
   • E. P. Kvam
   • G. W. Neudeck

   Regular Issue Paper Pages: 1331 - 1339

6. Compositional nonuniformities and strain relaxation at misoriented In_xGa_(1−x)As/GaAs interfaces

   • N. D. Zakharov
   • P. Werner
   • J. Y. Tsao

   Regular Issue Paper Pages: 1341 - 1344

7. Effects of oxygen doping on properties of microcrystalline silicon film grown using rapid thermal chemical vapor deposition

   • X. L. Xu
   • V. Misra
   • E. A. Irene

   Regular Issue Paper Pages: 1345 - 1351

8. Radiative recombination in modulation-doped GaAs/AlGaAs heterostructures in the presence of an electric field

   • T. Lundström
   • P. O. Holtz
   • A. C. Gossard

   Regular Issue Paper Pages: 1353 - 1359

9. Excess dark current due to saw damage in semi-insulating GaAs

   • Z. Q. Fang
   • D. C. Look

   Letters Pages: 1361 - 1363

10. Critical layer thickness of strained-layer InGaAs/GaAs multiple quantum wells determined by double-crystal x-ray diffraction

    • C. A. Wang
    • S. H. Groves
    • D. R. Calawa

    Letters Pages: 1365 - 1368

11. Fast growth of Cd_1−xZn_xTe single crystals by physical vapor transport

    • H. Wiedemeier
    • G. H. Wu

    Letters Pages: 1369 - 1372