1. Foreword

   Special Issue Paper Pages: 1 - 1

2. New materials and structures for photovoltaics

   • Alex Zunger
   • S. Wagner
   • P. M. Petroff

   Special Issue Paper Pages: 3 - 16

3. Research opportunities in polycrystalline compound solar cells

   • Richard H. Bube
   • Kim W. Mitchell

   Special Issue Paper Pages: 17 - 25

4. Linear optical response of semiconductors

   • Manuel Cardona

   Special Issue Paper Pages: 27 - 37

5. Hydrogenated amorphous semiconductors

   • W. Paul
   • R. A. Street
   • S. Wagner

   Special Issue Paper Pages: 39 - 48

6. Growth of photovoltaic semiconductors

   • E. Yablonovitch
   • G. B. Stringfellow
   • J. E. Greene

   Special Issue Paper Pages: 49 - 55

7. Research opportunities in crystalline III–V photovoltaics

   • Timothy J. Coutts
   • Mark S. Lundstrom

   Special Issue Paper Pages: 57 - 64

8. Opportunities in silicon photovoltaics and defect control in photovoltaic materials

   • A. Rohatgi
   • E. R. Weber
   • L. C. Kimerling

   Special Issue Paper Pages: 65 - 72

9. Highly conductive buried n+ layers in lnp:fe created by MeV energy Si, S, and Si/S implantation for application to microwave devices

   • Jayadev Vellanki
   • Ravi K. Nadella
   • Mulpuri V. Rao

   Regular Issue Paper Pages: 73 - 80

10. In-Situ generated arsine radicals for gallium arsenide homoepitaxy

    • B. G. Pihlstrom
    • L. R. Thompson
    • G. J. Collins

    Regular Issue Paper Pages: 81 - 86

11. Tertiaybutyldimethylantimony for GaSb growth

    • C. H. Chen
    • C. T. Chiu
    • G. B. Stringfellow

    Regular Issue Paper Pages: 87 - 91

12. Electron microscopy and energy loss study of low temperature plasma deposited oxide on a CZ grown Si substrate

    • G. L. Waytena

    Regular Issue Paper Pages: 93 - 97

13. Enhanced radiative absorption of thin, heavily beryllium-doped GaAs films

    • W. E. Hoke
    • D. G. Weir
    • P. S. Lyman

    Regular Issue Paper Pages: 99 - 104

14. The dissolution mechanism of oxide precipitates in czochralski silicon degenerately doped with boron during high temperature annealing

    • W. Wijaranakula

    Regular Issue Paper Pages: 105 - 110

15. Effect of semiconductor growth method and bulk doping on fermi level stabilization for aluminum and gold contacts on n- and p-GaAs(100)

    • I. M. Vitomirov
    • A. Raisanen
    • J. M. Woodall

    Regular Issue Paper Pages: 111 - 117

16. Hydrogen sulfide plasma passivation of indium phosphide

    • J. S. Herman
    • F. L. Terry

    Regular Issue Paper Pages: 119 - 124

17. Characterization of germanium implanted Si_1−xGe_x layer

    • Ashawant Gupta
    • Carmen Cook
    • Takashi Tokuyama

    Regular Issue Paper Pages: 125 - 128

18. Rapid thermal annealing of magnesium implanted GaAs-GaAIAs heterostructures experimental and simulated distributions

    • K. Ketata
    • R. Debrie
    • M. Ketata

    Regular Issue Paper Pages: 129 - 134

19. Analysis of rapid thermal annealings of boron and arsenic in polysilicon emitter structures

    • C. Gontrand
    • A. Merabet
    • J. P. Vallard

    Regular Issue Paper Pages: 135 - 141

20. A study of processed electronic materials containing inhomogeneous refractive index profiles

    • Gustavo E. Aizenberg
    • Pieter L. Swart
    • Beatrys M. Lacquet

    Regular Issue Paper Pages: 143 - 149

21. Deep levels in undoped Si_1−xGe_x grown by gas-source molecular beam epitaxy

    • S. H. Li
    • P. K. Bhattacharya
    • W. C. Mitchel

    Letter Pages: 151 - 153